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Impact of Interface Energetic Alignment and Mobile Ions on Charge Carrier Accumulation and Extraction in p‐i‐n Perovskite Solar Cells
Advanced Energy Materials
Swansea University Author: James Durrant
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DOI (Published version): 10.1002/aenm.202301102
Abstract
Understanding the kinetic competition between charge extraction and recombination, and how this is impacted by mobile ions, remains a key challenge in perovskite solar cells (PSCs). Here, this issue is addressed by combining operando photoluminescence (PL) measurements, which allow the measurement o...
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Here, this issue is addressed by combining operando photoluminescence (PL) measurements, which allow the measurement of real-time PL spectra during current–voltage (J–V) scans under 1-sun equivalent illumination, with the results of drift-diffusion simulations. This operando PL analysis allows direct comparison between the internal performance (recombination currents and quasi-Fermi-level-splitting (QFLS)) and the external performance (J–V) of a PSC during operation. Analyses of four PSCs with different electron transport materials (ETMs) quantify how a deeper ETM LUMO induces greater interfacial recombination, while a shallower LUMO impedes charge extraction. Furthermore, it is found that a low ETM mobility leads to charge accumulation in the perovskite under short-circuit conditions. However, thisalone cannot explain the remarkably high short-circuit QFLS of over 1 eV which is observed in all devices. 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v2 64065 2023-08-09 Impact of Interface Energetic Alignment and Mobile Ions on Charge Carrier Accumulation and Extraction in p‐i‐n Perovskite Solar Cells f3dd64bc260e5c07adfa916c27dbd58a 0000-0001-8353-7345 James Durrant James Durrant true false 2023-08-09 MTLS Understanding the kinetic competition between charge extraction and recombination, and how this is impacted by mobile ions, remains a key challenge in perovskite solar cells (PSCs). Here, this issue is addressed by combining operando photoluminescence (PL) measurements, which allow the measurement of real-time PL spectra during current–voltage (J–V) scans under 1-sun equivalent illumination, with the results of drift-diffusion simulations. This operando PL analysis allows direct comparison between the internal performance (recombination currents and quasi-Fermi-level-splitting (QFLS)) and the external performance (J–V) of a PSC during operation. Analyses of four PSCs with different electron transport materials (ETMs) quantify how a deeper ETM LUMO induces greater interfacial recombination, while a shallower LUMO impedes charge extraction. Furthermore, it is found that a low ETM mobility leads to charge accumulation in the perovskite under short-circuit conditions. However, thisalone cannot explain the remarkably high short-circuit QFLS of over 1 eV which is observed in all devices. Instead, drift-diffusion simulations allow this effect to be assigned to the presence of mobile ions which screen the internal electric field at short-circuit and lead to a reduction in the short-circuit current density by over 2 mA cm−2 in the best device. Journal Article Advanced Energy Materials Wiley 1614-6832 1614-6840 Charge accumulation, charge extraction, drift-diffusion simulation, ion migration, operando photoluminescence spectroscopy, perovskite solar cells, quasi-Fermi level splitting 0 0 0 0001-01-01 10.1002/aenm.202301102 http://dx.doi.org/10.1002/aenm.202301102 COLLEGE NANME Materials Science and Engineering COLLEGE CODE MTLS Swansea University EPSRC, Korean NRF GRL, European Commission Research Executive Agency, Royal Society University Research Fellowship, Royal Society Research Fellows Enhanced Research Expenses EP/T028513/1, EP/L016702/1, EP/V057839/1, EP/T012455/1, 2017K1A1A2013153, 859752 HEL4CHIR-OLED H2020-MSCA-ITN-2019, URF/R1/221834, RF/ERE/221066 2023-09-08T12:15:50.8061181 2023-08-09T10:02:14.9913453 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering Weidong Xu 0000-0002-3934-8579 1 Lucy J. F. Hart 0000-0002-6269-4672 2 Benjamin Moss 3 Pietro Caprioglio 4 Thomas J. Macdonald 5 Francesco Furlan 6 Julianna Panidi 7 Robert D. J. Oliver 8 Richard A. Pacalaj 9 Martin Heeney 10 Nicola Gasparini 11 Henry J. Snaith 12 Piers R. F. Barnes 13 James Durrant 0000-0001-8353-7345 14 64065__28278__576fc709fa16420a920151d497fe9f0e.pdf 64065.pdf 2023-08-09T10:13:37.4653248 Output 2479362 application/pdf Version of Record true © 2023 The Authors. Advanced Energy Materials published by Wiley-VCH GmbH. Distributed under the terms of a Creative Commons Attribution 4.0 License (CC BY 4.0). true eng http://creativecommons.org/licenses/by/4.0/ |
title |
Impact of Interface Energetic Alignment and Mobile Ions on Charge Carrier Accumulation and Extraction in p‐i‐n Perovskite Solar Cells |
spellingShingle |
Impact of Interface Energetic Alignment and Mobile Ions on Charge Carrier Accumulation and Extraction in p‐i‐n Perovskite Solar Cells James Durrant |
title_short |
Impact of Interface Energetic Alignment and Mobile Ions on Charge Carrier Accumulation and Extraction in p‐i‐n Perovskite Solar Cells |
title_full |
Impact of Interface Energetic Alignment and Mobile Ions on Charge Carrier Accumulation and Extraction in p‐i‐n Perovskite Solar Cells |
title_fullStr |
Impact of Interface Energetic Alignment and Mobile Ions on Charge Carrier Accumulation and Extraction in p‐i‐n Perovskite Solar Cells |
title_full_unstemmed |
Impact of Interface Energetic Alignment and Mobile Ions on Charge Carrier Accumulation and Extraction in p‐i‐n Perovskite Solar Cells |
title_sort |
Impact of Interface Energetic Alignment and Mobile Ions on Charge Carrier Accumulation and Extraction in p‐i‐n Perovskite Solar Cells |
author_id_str_mv |
f3dd64bc260e5c07adfa916c27dbd58a |
author_id_fullname_str_mv |
f3dd64bc260e5c07adfa916c27dbd58a_***_James Durrant |
author |
James Durrant |
author2 |
Weidong Xu Lucy J. F. Hart Benjamin Moss Pietro Caprioglio Thomas J. Macdonald Francesco Furlan Julianna Panidi Robert D. J. Oliver Richard A. Pacalaj Martin Heeney Nicola Gasparini Henry J. Snaith Piers R. F. Barnes James Durrant |
format |
Journal article |
container_title |
Advanced Energy Materials |
institution |
Swansea University |
issn |
1614-6832 1614-6840 |
doi_str_mv |
10.1002/aenm.202301102 |
publisher |
Wiley |
college_str |
Faculty of Science and Engineering |
hierarchytype |
|
hierarchy_top_id |
facultyofscienceandengineering |
hierarchy_top_title |
Faculty of Science and Engineering |
hierarchy_parent_id |
facultyofscienceandengineering |
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Faculty of Science and Engineering |
department_str |
School of Engineering and Applied Sciences - Materials Science and Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Materials Science and Engineering |
url |
http://dx.doi.org/10.1002/aenm.202301102 |
document_store_str |
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active_str |
0 |
description |
Understanding the kinetic competition between charge extraction and recombination, and how this is impacted by mobile ions, remains a key challenge in perovskite solar cells (PSCs). Here, this issue is addressed by combining operando photoluminescence (PL) measurements, which allow the measurement of real-time PL spectra during current–voltage (J–V) scans under 1-sun equivalent illumination, with the results of drift-diffusion simulations. This operando PL analysis allows direct comparison between the internal performance (recombination currents and quasi-Fermi-level-splitting (QFLS)) and the external performance (J–V) of a PSC during operation. Analyses of four PSCs with different electron transport materials (ETMs) quantify how a deeper ETM LUMO induces greater interfacial recombination, while a shallower LUMO impedes charge extraction. Furthermore, it is found that a low ETM mobility leads to charge accumulation in the perovskite under short-circuit conditions. However, thisalone cannot explain the remarkably high short-circuit QFLS of over 1 eV which is observed in all devices. Instead, drift-diffusion simulations allow this effect to be assigned to the presence of mobile ions which screen the internal electric field at short-circuit and lead to a reduction in the short-circuit current density by over 2 mA cm−2 in the best device. |
published_date |
0001-01-01T12:15:52Z |
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1776467839376424960 |
score |
11.01628 |