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Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components

Lishu Liu, Zengxia Mei, Yaonan Hou, Huili Liang, Alexander Azarov, Vishnukanthan Venkatachalapathy, Andrej Kuznetsov, Xiaolong Du

Scientific Reports, Volume: 5, Issue: 1

Swansea University Author: Yaonan Hou

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DOI (Published version): 10.1038/srep15516

Abstract

N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1–xO for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg0.51Zn0.49O active components, which has...

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Published in: Scientific Reports
ISSN: 2045-2322
Published: Springer Science and Business Media LLC 2015
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URI: https://cronfa.swan.ac.uk/Record/cronfa65313
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spelling v2 65313 2023-12-14 Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components 113975f710084997abdb26ad5fa03e8e Yaonan Hou Yaonan Hou true false 2023-12-14 EEEG N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1–xO for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg0.51Zn0.49O active components, which has been reliably achieved by fluorine doping via radio-frequency plasma assisted molecular beam epitaxial growth. Fluorine dopants were demonstrated to be effective donors in Mg0.51Zn0.49O single crystal film having a solar-blind 4.43 eV bandgap, with an average concentration of 1.0 × 1019 F/cm3.The dramatically increased carrier concentration (2.85 × 1017 cm−3 vs ~1014 cm−3) and decreased resistivity (129 Ω · cm vs ~106 Ω cm) indicate that the electrical properties of semi-insulating Mg0.51Zn0.49O film can be delicately regulated by F doping. Interestingly, two donor levels (17 meV and 74 meV) associated with F were revealed by temperature-dependent Hall measurements. A Schottky type metal-semiconductor-metal ultraviolet photodetector manifests a remarkably enhanced photocurrent, two orders of magnitude higher than that of the undoped counterpart. The responsivity is greatly enhanced from 0.34 mA/W to 52 mA/W under 10 V bias. The detectivity increases from 1.89 × 109 cm Hz1/2/W to 3.58 × 1010 cm Hz1/2/W under 10 V bias at room temperature.These results exhibit F doping serves as a promising pathway for improving the performance of high-Mg-content MgxZn1-xO-based devices. Journal Article Scientific Reports 5 1 Springer Science and Business Media LLC 2045-2322 22 10 2015 2015-10-22 10.1038/srep15516 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2024-04-10T15:20:22.0072481 2023-12-14T16:38:58.6087587 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Lishu Liu 1 Zengxia Mei 2 Yaonan Hou 3 Huili Liang 4 Alexander Azarov 5 Vishnukanthan Venkatachalapathy 6 Andrej Kuznetsov 7 Xiaolong Du 8
title Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components
spellingShingle Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components
Yaonan Hou
title_short Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components
title_full Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components
title_fullStr Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components
title_full_unstemmed Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components
title_sort Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components
author_id_str_mv 113975f710084997abdb26ad5fa03e8e
author_id_fullname_str_mv 113975f710084997abdb26ad5fa03e8e_***_Yaonan Hou
author Yaonan Hou
author2 Lishu Liu
Zengxia Mei
Yaonan Hou
Huili Liang
Alexander Azarov
Vishnukanthan Venkatachalapathy
Andrej Kuznetsov
Xiaolong Du
format Journal article
container_title Scientific Reports
container_volume 5
container_issue 1
publishDate 2015
institution Swansea University
issn 2045-2322
doi_str_mv 10.1038/srep15516
publisher Springer Science and Business Media LLC
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
description N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1–xO for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg0.51Zn0.49O active components, which has been reliably achieved by fluorine doping via radio-frequency plasma assisted molecular beam epitaxial growth. Fluorine dopants were demonstrated to be effective donors in Mg0.51Zn0.49O single crystal film having a solar-blind 4.43 eV bandgap, with an average concentration of 1.0 × 1019 F/cm3.The dramatically increased carrier concentration (2.85 × 1017 cm−3 vs ~1014 cm−3) and decreased resistivity (129 Ω · cm vs ~106 Ω cm) indicate that the electrical properties of semi-insulating Mg0.51Zn0.49O film can be delicately regulated by F doping. Interestingly, two donor levels (17 meV and 74 meV) associated with F were revealed by temperature-dependent Hall measurements. A Schottky type metal-semiconductor-metal ultraviolet photodetector manifests a remarkably enhanced photocurrent, two orders of magnitude higher than that of the undoped counterpart. The responsivity is greatly enhanced from 0.34 mA/W to 52 mA/W under 10 V bias. The detectivity increases from 1.89 × 109 cm Hz1/2/W to 3.58 × 1010 cm Hz1/2/W under 10 V bias at room temperature.These results exhibit F doping serves as a promising pathway for improving the performance of high-Mg-content MgxZn1-xO-based devices.
published_date 2015-10-22T15:20:18Z
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