Journal article 63 views
Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors
H. L. Liang,
Z. X. Mei,
Q. H. Zhang,
L. Gu,
S. Liang,
Yaonan Hou,
D. Q. Ye,
C. Z. Gu,
R. C. Yu,
X. L. Du
Applied Physics Letters, Volume: 98, Issue: 22
Swansea University Author: Yaonan Hou
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1063/1.3595342
Abstract
Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors
| Published in: | Applied Physics Letters |
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| ISSN: | 0003-6951 1077-3118 |
| Published: |
AIP Publishing
2011
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa65325 |
| Tags: |
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| Keywords: |
Band gap, Heterostructures, Microelectronics, Optoelectronic devices, Photodetectors, Electron diffraction, Epitaxy, Crystal structure, Oxidation processes, Chemical compounds |
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| College: |
Faculty of Science and Engineering |
| Issue: |
22 |