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Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors

H. L. Liang, Z. X. Mei, Q. H. Zhang, L. Gu, S. Liang, Yaonan Hou, D. Q. Ye, C. Z. Gu, R. C. Yu, X. L. Du

Applied Physics Letters, Volume: 98, Issue: 22

Swansea University Author: Yaonan Hou

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DOI (Published version): 10.1063/1.3595342

Published in: Applied Physics Letters
ISSN: 0003-6951 1077-3118
Published: AIP Publishing 2011
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URI: https://cronfa.swan.ac.uk/Record/cronfa65325
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first_indexed 2024-04-09T11:32:39Z
last_indexed 2024-04-09T11:32:39Z
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spelling v2 65325 2023-12-14 Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors 113975f710084997abdb26ad5fa03e8e Yaonan Hou Yaonan Hou true false 2023-12-14 EEEG Journal Article Applied Physics Letters 98 22 AIP Publishing 0003-6951 1077-3118 Band gap, Heterostructures, Microelectronics, Optoelectronic devices, Photodetectors, Electron diffraction, Epitaxy, Crystal structure, Oxidation processes, Chemical compounds 31 5 2011 2011-05-31 10.1063/1.3595342 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2024-04-09T12:32:42.4927981 2023-12-14T16:49:52.0597632 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering H. L. Liang 1 Z. X. Mei 2 Q. H. Zhang 3 L. Gu 4 S. Liang 5 Yaonan Hou 6 D. Q. Ye 7 C. Z. Gu 8 R. C. Yu 9 X. L. Du 10
title Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors
spellingShingle Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors
Yaonan Hou
title_short Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors
title_full Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors
title_fullStr Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors
title_full_unstemmed Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors
title_sort Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors
author_id_str_mv 113975f710084997abdb26ad5fa03e8e
author_id_fullname_str_mv 113975f710084997abdb26ad5fa03e8e_***_Yaonan Hou
author Yaonan Hou
author2 H. L. Liang
Z. X. Mei
Q. H. Zhang
L. Gu
S. Liang
Yaonan Hou
D. Q. Ye
C. Z. Gu
R. C. Yu
X. L. Du
format Journal article
container_title Applied Physics Letters
container_volume 98
container_issue 22
publishDate 2011
institution Swansea University
issn 0003-6951
1077-3118
doi_str_mv 10.1063/1.3595342
publisher AIP Publishing
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2011-05-31T12:32:39Z
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score 11.035655

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