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Annealing Effects of Ti/Au Contact on n-MgZnO/p-Si Ultraviolet-B Photodetectors

Yaonan Hou, Zengxia Mei, Huili Liang, Daqian Ye, Changzhi Gu, Xiaolong Du, Yicheng Lu

IEEE Transactions on Electron Devices, Volume: 60, Issue: 10, Pages: 3474 - 3477

Swansea University Author: Yaonan Hou

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Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: Institute of Electrical and Electronics Engineers (IEEE) 2013
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa65320
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first_indexed 2024-04-10T14:09:22Z
last_indexed 2024-04-10T14:09:22Z
id cronfa65320
recordtype SURis
fullrecord <?xml version="1.0" encoding="utf-8"?><rfc1807 xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:xsd="http://www.w3.org/2001/XMLSchema"><bib-version>v2</bib-version><id>65320</id><entry>2023-12-14</entry><title>Annealing Effects of Ti/Au Contact on n-MgZnO/p-Si Ultraviolet-B Photodetectors</title><swanseaauthors><author><sid>113975f710084997abdb26ad5fa03e8e</sid><firstname>Yaonan</firstname><surname>Hou</surname><name>Yaonan Hou</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2023-12-14</date><deptcode>EEEG</deptcode><abstract/><type>Journal Article</type><journal>IEEE Transactions on Electron Devices</journal><volume>60</volume><journalNumber>10</journalNumber><paginationStart>3474</paginationStart><paginationEnd>3477</paginationEnd><publisher>Institute of Electrical and Electronics Engineers (IEEE)</publisher><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint>0018-9383</issnPrint><issnElectronic>1557-9646</issnElectronic><keywords/><publishedDay>1</publishedDay><publishedMonth>10</publishedMonth><publishedYear>2013</publishedYear><publishedDate>2013-10-01</publishedDate><doi>10.1109/ted.2013.2278894</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><funders/><projectreference/><lastEdited>2024-04-10T15:09:25.7326190</lastEdited><Created>2023-12-14T16:45:53.4964529</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Yaonan</firstname><surname>Hou</surname><order>1</order></author><author><firstname>Zengxia</firstname><surname>Mei</surname><order>2</order></author><author><firstname>Huili</firstname><surname>Liang</surname><order>3</order></author><author><firstname>Daqian</firstname><surname>Ye</surname><order>4</order></author><author><firstname>Changzhi</firstname><surname>Gu</surname><order>5</order></author><author><firstname>Xiaolong</firstname><surname>Du</surname><order>6</order></author><author><firstname>Yicheng</firstname><surname>Lu</surname><order>7</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling v2 65320 2023-12-14 Annealing Effects of Ti/Au Contact on n-MgZnO/p-Si Ultraviolet-B Photodetectors 113975f710084997abdb26ad5fa03e8e Yaonan Hou Yaonan Hou true false 2023-12-14 EEEG Journal Article IEEE Transactions on Electron Devices 60 10 3474 3477 Institute of Electrical and Electronics Engineers (IEEE) 0018-9383 1557-9646 1 10 2013 2013-10-01 10.1109/ted.2013.2278894 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2024-04-10T15:09:25.7326190 2023-12-14T16:45:53.4964529 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Yaonan Hou 1 Zengxia Mei 2 Huili Liang 3 Daqian Ye 4 Changzhi Gu 5 Xiaolong Du 6 Yicheng Lu 7
title Annealing Effects of Ti/Au Contact on n-MgZnO/p-Si Ultraviolet-B Photodetectors
spellingShingle Annealing Effects of Ti/Au Contact on n-MgZnO/p-Si Ultraviolet-B Photodetectors
Yaonan Hou
title_short Annealing Effects of Ti/Au Contact on n-MgZnO/p-Si Ultraviolet-B Photodetectors
title_full Annealing Effects of Ti/Au Contact on n-MgZnO/p-Si Ultraviolet-B Photodetectors
title_fullStr Annealing Effects of Ti/Au Contact on n-MgZnO/p-Si Ultraviolet-B Photodetectors
title_full_unstemmed Annealing Effects of Ti/Au Contact on n-MgZnO/p-Si Ultraviolet-B Photodetectors
title_sort Annealing Effects of Ti/Au Contact on n-MgZnO/p-Si Ultraviolet-B Photodetectors
author_id_str_mv 113975f710084997abdb26ad5fa03e8e
author_id_fullname_str_mv 113975f710084997abdb26ad5fa03e8e_***_Yaonan Hou
author Yaonan Hou
author2 Yaonan Hou
Zengxia Mei
Huili Liang
Daqian Ye
Changzhi Gu
Xiaolong Du
Yicheng Lu
format Journal article
container_title IEEE Transactions on Electron Devices
container_volume 60
container_issue 10
container_start_page 3474
publishDate 2013
institution Swansea University
issn 0018-9383
1557-9646
doi_str_mv 10.1109/ted.2013.2278894
publisher Institute of Electrical and Electronics Engineers (IEEE)
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2013-10-01T15:09:22Z
_version_ 1795957102725824512
score 11.012678