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Nano-Resists for Next Generation Semiconductors / FILIP KRZYMIENIECKI

Swansea University Author: FILIP KRZYMIENIECKI

  • Redacted version - open access under embargo until: 20th March 2026

Abstract

The incorporation of nanoparticles can improve material characteristics, with their small particle size providing distinctive benefits. Nanocomposite resists in the semiconductor industry can improve feature resolutions on the nanometre scale or etch resistance, with applications including more ener...

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Published: Swansea, Wales, UK 2024
Institution: Swansea University
Degree level: Master of Research
Degree name: MSc by Research
Supervisor: Palmer, Richard E. ; Evans, Jonathan E. ; Mitchell, Jacob ; Ashraf, Huma ; Elwin, Matthew P.
URI: https://cronfa.swan.ac.uk/Record/cronfa66100
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first_indexed 2024-04-20T11:44:31Z
last_indexed 2024-04-20T11:44:31Z
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recordtype RisThesis
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spelling v2 66100 2024-04-20 Nano-Resists for Next Generation Semiconductors b6ab62fc078790ff770c5a24688c9586 FILIP KRZYMIENIECKI FILIP KRZYMIENIECKI true false 2024-04-20 The incorporation of nanoparticles can improve material characteristics, with their small particle size providing distinctive benefits. Nanocomposite resists in the semiconductor industry can improve feature resolutions on the nanometre scale or etch resistance, with applications including more energy efficient MEMS and novel sensors. This thesis focuses on integrating nickel nanoparticles into photoresists to improve the etch resistance of the material. Increased etch resistance enables the production of deep trenches with nano feature sizes, as well as maintaining samples with even geometry of the structures. The experiments were set up to test the etch resistance of samples with different loading of nickel nanoparticles. Commercially purchased nanoparticles were used for the experiments, as a basis for future use of the nanoparticles produced by MACS (Matrix Assembly Cluster Source) tool. The etch tests were conducted in SPTS systems, an APS (advanced plasma source) tool designed for etching of strongly bonded materials and a DSi-v tool designed for etching Si for vertical sidewalls with the Bosch process. Ellipsometry was used to obtain the differences in thickness pre- and post-etching of the samples, data which was used to calculate the sample etch rates. SEM imaging was used to study the texture of the nanocomposite resists. For the commercially purchased nanoparticle samples, MIR-701 photoresist was used. The results show a positive relationship between the nickel loading and the etch resistance, with an increase of as much as 17% over the control sample. At the structural level, the nanoparticles were integrated into the photoresist successfully, with an even film surface. E-Thesis Swansea, Wales, UK Photoresist, resist, semiconductor, Silicon, Nickel, nanoparticles, etch, etch resistance, etch rate, SPTS, DSi-v, APS 20 3 2024 2024-03-20 A selection of third party content is redacted or is partially redacted from this thesis due to copyright restrictions. COLLEGE NANME COLLEGE CODE Swansea University Palmer, Richard E. ; Evans, Jonathan E. ; Mitchell, Jacob ; Ashraf, Huma ; Elwin, Matthew P. Master of Research MSc by Research M2A and SPTS Technologies Ltd. M2A and SPTS Technologies Ltd. 2024-04-22T14:40:12.1323512 2024-04-20T12:40:55.3036339 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering FILIP KRZYMIENIECKI 1 Under embargo Under embargo 2024-04-22T14:30:02.0127855 Output 1381172 application/pdf Redacted version - open access true 2026-03-20T00:00:00.0000000 Copyright: The Author, Filip R. Krzymieniecki, 2024. true eng
title Nano-Resists for Next Generation Semiconductors
spellingShingle Nano-Resists for Next Generation Semiconductors
FILIP KRZYMIENIECKI
title_short Nano-Resists for Next Generation Semiconductors
title_full Nano-Resists for Next Generation Semiconductors
title_fullStr Nano-Resists for Next Generation Semiconductors
title_full_unstemmed Nano-Resists for Next Generation Semiconductors
title_sort Nano-Resists for Next Generation Semiconductors
author_id_str_mv b6ab62fc078790ff770c5a24688c9586
author_id_fullname_str_mv b6ab62fc078790ff770c5a24688c9586_***_FILIP KRZYMIENIECKI
author FILIP KRZYMIENIECKI
author2 FILIP KRZYMIENIECKI
format E-Thesis
publishDate 2024
institution Swansea University
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Materials Science and Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Materials Science and Engineering
document_store_str 0
active_str 0
description The incorporation of nanoparticles can improve material characteristics, with their small particle size providing distinctive benefits. Nanocomposite resists in the semiconductor industry can improve feature resolutions on the nanometre scale or etch resistance, with applications including more energy efficient MEMS and novel sensors. This thesis focuses on integrating nickel nanoparticles into photoresists to improve the etch resistance of the material. Increased etch resistance enables the production of deep trenches with nano feature sizes, as well as maintaining samples with even geometry of the structures. The experiments were set up to test the etch resistance of samples with different loading of nickel nanoparticles. Commercially purchased nanoparticles were used for the experiments, as a basis for future use of the nanoparticles produced by MACS (Matrix Assembly Cluster Source) tool. The etch tests were conducted in SPTS systems, an APS (advanced plasma source) tool designed for etching of strongly bonded materials and a DSi-v tool designed for etching Si for vertical sidewalls with the Bosch process. Ellipsometry was used to obtain the differences in thickness pre- and post-etching of the samples, data which was used to calculate the sample etch rates. SEM imaging was used to study the texture of the nanocomposite resists. For the commercially purchased nanoparticle samples, MIR-701 photoresist was used. The results show a positive relationship between the nickel loading and the etch resistance, with an increase of as much as 17% over the control sample. At the structural level, the nanoparticles were integrated into the photoresist successfully, with an even film surface.
published_date 2024-03-20T14:40:08Z
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score 11.036378

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