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Native point defects of semiconducting layered Bi2O2Se
,
Luping Shi,
John Robertson
Scientific Reports, Volume: 8, Issue: 1
Swansea University Author:
Roland Gillen
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DOI (Published version): 10.1038/s41598-018-29385-8
Abstract
Bi2O2Se is an emerging semiconducting, air-stable layered material (Nat. Nanotechnol. 2017, 12, 530; Nano Lett. 2017, 17, 3021), potentially exceeding MoS2 and phosphorene in electron mobility and rivalling typical Van der Waals stacked layered materials in the next-generation high-speed and low-pow...
| Published in: | Scientific Reports |
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| ISSN: | 2045-2322 |
| Published: |
Springer Science and Business Media LLC
2018
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa66668 |
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| Abstract: |
Bi2O2Se is an emerging semiconducting, air-stable layered material (Nat. Nanotechnol. 2017, 12, 530; Nano Lett. 2017, 17, 3021), potentially exceeding MoS2 and phosphorene in electron mobility and rivalling typical Van der Waals stacked layered materials in the next-generation high-speed and low-power electronics. Holding the promise of functional versatility, it is arousing rapidly growing interest from various disciplines, including optoelectronics, thermoelectronics and piezoelectronics. In this work, we comprehensively study the electrical properties of the native point defects in Bi2O2Se, as an essential step toward understanding the fundamentals of this material. The defect landscapes dependent on both Fermi energy and the chemical potentials of atomic constituents are investigated. Along with the bulk defect analysis, a complementary inspection of the surface properties, within the simple context of charge neutrality level model, elucidates the observed n-type characteristics of Bi2O2Se based FETs. This work provides important guide to engineer the defects of Bi2O2Se for desired properties, which is key to the successful application of this emerging layered material. |
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| College: |
Faculty of Science and Engineering |
| Funders: |
H. Li thanks Beijing Natural Science Foundation (No. 4164087) and National Natural Science Foundation (No. 61704096) for financial support. R. Gillen thanks Deutsche Forschungsgemeinschaft (DFG) within the Cluster of Excellence Engineering of Advanced Materials (project EXC 315) (Bridge Funding) for financial support. L.P. Shi thanks National Natural Science foundation (No. 61603209, 61475080, 61327902), SuZhou-Tsinghua innovation leading program (2016SZ0102) and Beijing Innovation Centre for Future Chip for financial support. J. Robertson thanks EPSRC for financial support. Computational resources are provided by high performance computing service of Tsinghua National Laboratory for Information Science and Technology and high performance computing service of University of Cambridge. |
| Issue: |
1 |