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Native point defects of semiconducting layered Bi2O2Se

Huanglong Li, Xintong Xu, Yi Zhang, Roland Gillen Orcid Logo, Luping Shi, John Robertson

Scientific Reports, Volume: 8, Issue: 1

Swansea University Author: Roland Gillen Orcid Logo

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DOI (Published version): 10.1038/s41598-018-29385-8

Abstract

Bi2O2Se is an emerging semiconducting, air-stable layered material (Nat. Nanotechnol. 2017, 12, 530; Nano Lett. 2017, 17, 3021), potentially exceeding MoS2 and phosphorene in electron mobility and rivalling typical Van der Waals stacked layered materials in the next-generation high-speed and low-pow...

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Published in: Scientific Reports
ISSN: 2045-2322
Published: Springer Science and Business Media LLC 2018
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URI: https://cronfa.swan.ac.uk/Record/cronfa66668
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spelling v2 66668 2024-06-11 Native point defects of semiconducting layered Bi2O2Se 8fd99815709ad1e4ae52e27f63257604 0000-0002-7913-0953 Roland Gillen Roland Gillen true false 2024-06-11 ACEM Bi2O2Se is an emerging semiconducting, air-stable layered material (Nat. Nanotechnol. 2017, 12, 530; Nano Lett. 2017, 17, 3021), potentially exceeding MoS2 and phosphorene in electron mobility and rivalling typical Van der Waals stacked layered materials in the next-generation high-speed and low-power electronics. Holding the promise of functional versatility, it is arousing rapidly growing interest from various disciplines, including optoelectronics, thermoelectronics and piezoelectronics. In this work, we comprehensively study the electrical properties of the native point defects in Bi2O2Se, as an essential step toward understanding the fundamentals of this material. The defect landscapes dependent on both Fermi energy and the chemical potentials of atomic constituents are investigated. Along with the bulk defect analysis, a complementary inspection of the surface properties, within the simple context of charge neutrality level model, elucidates the observed n-type characteristics of Bi2O2Se based FETs. This work provides important guide to engineer the defects of Bi2O2Se for desired properties, which is key to the successful application of this emerging layered material. Journal Article Scientific Reports 8 1 Springer Science and Business Media LLC 2045-2322 19 7 2018 2018-07-19 10.1038/s41598-018-29385-8 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University Another institution paid the OA fee H. Li thanks Beijing Natural Science Foundation (No. 4164087) and National Natural Science Foundation (No. 61704096) for financial support. R. Gillen thanks Deutsche Forschungsgemeinschaft (DFG) within the Cluster of Excellence Engineering of Advanced Materials (project EXC 315) (Bridge Funding) for financial support. L.P. Shi thanks National Natural Science foundation (No. 61603209, 61475080, 61327902), SuZhou-Tsinghua innovation leading program (2016SZ0102) and Beijing Innovation Centre for Future Chip for financial support. J. Robertson thanks EPSRC for financial support. Computational resources are provided by high performance computing service of Tsinghua National Laboratory for Information Science and Technology and high performance computing service of University of Cambridge. 2024-08-14T13:39:57.4195118 2024-06-11T12:54:12.2101654 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Huanglong Li 1 Xintong Xu 2 Yi Zhang 3 Roland Gillen 0000-0002-7913-0953 4 Luping Shi 5 John Robertson 6 66668__31108__fa6f9008b3dd48e5a65a584ff2c915fb.pdf 66668.VoR.pdf 2024-08-14T13:39:04.8655994 Output 1959538 application/pdf Version of Record true This article is licensed under a Creative Commons Attribution 4.0 International License. true eng http://creativecommons.org/licenses/by/4.0/
title Native point defects of semiconducting layered Bi2O2Se
spellingShingle Native point defects of semiconducting layered Bi2O2Se
Roland Gillen
title_short Native point defects of semiconducting layered Bi2O2Se
title_full Native point defects of semiconducting layered Bi2O2Se
title_fullStr Native point defects of semiconducting layered Bi2O2Se
title_full_unstemmed Native point defects of semiconducting layered Bi2O2Se
title_sort Native point defects of semiconducting layered Bi2O2Se
author_id_str_mv 8fd99815709ad1e4ae52e27f63257604
author_id_fullname_str_mv 8fd99815709ad1e4ae52e27f63257604_***_Roland Gillen
author Roland Gillen
author2 Huanglong Li
Xintong Xu
Yi Zhang
Roland Gillen
Luping Shi
John Robertson
format Journal article
container_title Scientific Reports
container_volume 8
container_issue 1
publishDate 2018
institution Swansea University
issn 2045-2322
doi_str_mv 10.1038/s41598-018-29385-8
publisher Springer Science and Business Media LLC
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
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description Bi2O2Se is an emerging semiconducting, air-stable layered material (Nat. Nanotechnol. 2017, 12, 530; Nano Lett. 2017, 17, 3021), potentially exceeding MoS2 and phosphorene in electron mobility and rivalling typical Van der Waals stacked layered materials in the next-generation high-speed and low-power electronics. Holding the promise of functional versatility, it is arousing rapidly growing interest from various disciplines, including optoelectronics, thermoelectronics and piezoelectronics. In this work, we comprehensively study the electrical properties of the native point defects in Bi2O2Se, as an essential step toward understanding the fundamentals of this material. The defect landscapes dependent on both Fermi energy and the chemical potentials of atomic constituents are investigated. Along with the bulk defect analysis, a complementary inspection of the surface properties, within the simple context of charge neutrality level model, elucidates the observed n-type characteristics of Bi2O2Se based FETs. This work provides important guide to engineer the defects of Bi2O2Se for desired properties, which is key to the successful application of this emerging layered material.
published_date 2018-07-19T13:39:55Z
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score 11.028886

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