Journal article 15 views
Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon
Saptarsi Ghosh
,
Alexander Hinz
,
Simon M. Fairclough,
Bogdan F. Spiridon,
Abdalla Eblabla,
Michael A. Casbon,
Menno J. Kappers,
Khaled Elgaid,
Saiful Alam,
Rachel A. Oliver
,
David J. Wallis
ACS Applied Electronic Materials, Volume: 3, Issue: 2, Pages: 813 - 824
Swansea University Author:
Saptarsi Ghosh
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1021/acsaelm.0c00966
Abstract
Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon
Published in: | ACS Applied Electronic Materials |
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ISSN: | 2637-6113 2637-6113 |
Published: |
American Chemical Society (ACS)
2021
|
Online Access: |
Check full text
|
URI: | https://cronfa.swan.ac.uk/Record/cronfa66876 |
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College: |
Faculty of Science and Engineering |
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Issue: |
2 |
Start Page: |
813 |
End Page: |
824 |