A capacitance-coupled Ga2O3 memristor

Moore, Alfred; Li, Lijie; Shao, Hang; Tang, Xiaoyan; Liang, Huili; Mei, Zengxia; Hou, Yaonan

doi:10.1063/5.0260023

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A capacitance-coupled Ga2O3 memristor

Alfred Moore

, Lijie Li

, Hang Shao, Xiaoyan Tang, Huili Liang, Zengxia Mei, Yaonan Hou

AIP Advances, Volume: 15, Issue: 4

Swansea University Authors: Lijie Li , Yaonan Hou

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DOI (Published version): 10.1063/5.0260023

Abstract

Memristors are regarded as a key electronic component for non-von Neumann computing, such as neuromorphic networks. Hereby, we report a capacitance-coupled memristor (C-memristor) configured with ITO/Ga2O3/ITO coplanar interdigital structures. Depending on the voltage sweeping directions, the C-memr...

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Published in:	AIP Advances
ISSN:	2158-3226
Published:	AIP Publishing 2025
Online Access:	Check full text
URI:	https://cronfa.swan.ac.uk/Record/cronfa69144

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spelling	2025-04-09T15:18:06.8036424 v2 69144 2025-03-24 A capacitance-coupled Ga2O3 memristor ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 113975f710084997abdb26ad5fa03e8e 0000-0001-9461-3841 Yaonan Hou Yaonan Hou true false 2025-03-24 ACEM Memristors are regarded as a key electronic component for non-von Neumann computing, such as neuromorphic networks. Hereby, we report a capacitance-coupled memristor (C-memristor) configured with ITO/Ga2O3/ITO coplanar interdigital structures. Depending on the voltage sweeping directions, the C-memristor exhibits a clear current switching with different polarities, offering an easy-to-readout electronic status. Due to the coupled capacitance, the difference between the currents in forward and reverse scanning strongly depends on the voltage sweeping speed, which was quantitatively studied with an equivalent circuit that we established. A device model based on filamentary conductive paths formed by the electrically driven oxygen vacancies was utilized to explain the working mechanism of the C-memristor, which aligns well with the observed results. Unlike previously reported Ga2O3 memristors that rely only on the status of the resistance, our device also exhibits capacitance variation, offering an additional degree of freedom (e.g., the power nodes) for constructing a neural network. Journal Article AIP Advances 15 4 AIP Publishing 2158-3226 4 4 2025 2025-04-04 10.1063/5.0260023 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University External research funder(s) paid the OA fee (includes OA grants disbursed by the Library) This work was supported by the EPSRC under Grant No. EP/T019085/1, Royal Society under Grant No. IEC\NSFC\242145, and SACEME Seedcorn funding from Swansea University. H.L. and Z.M. thank the National Natural Science Foundation of China for the support under Grant Nos. 12174275 and 62174113. 2025-04-09T15:18:06.8036424 2025-03-24T15:28:27.4997239 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Aerospace Engineering Alfred Moore 0009-0008-3374-5638 1 Lijie Li 0000-0003-4630-7692 2 Hang Shao 3 Xiaoyan Tang 4 Huili Liang 5 Zengxia Mei 6 Yaonan Hou 0000-0001-9461-3841 7 69144__33974__02a0bb9419bb4fd8990098ee46f6749e.pdf 69144.VoR.pdf 2025-04-09T15:14:41.7351268 Output 5701116 application/pdf Version of Record true © 2025 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license. true eng https://creativecommons.org/licenses/by/4.0/
title	A capacitance-coupled Ga2O3 memristor
spellingShingle	A capacitance-coupled Ga2O3 memristor Lijie Li Yaonan Hou
title_short	A capacitance-coupled Ga2O3 memristor
title_full	A capacitance-coupled Ga2O3 memristor
title_fullStr	A capacitance-coupled Ga2O3 memristor
title_full_unstemmed	A capacitance-coupled Ga2O3 memristor
title_sort	A capacitance-coupled Ga2O3 memristor
author_id_str_mv	ed2c658b77679a28e4c1dcf95af06bd6 113975f710084997abdb26ad5fa03e8e
author_id_fullname_str_mv	ed2c658b77679a28e4c1dcf95af06bd6_*_Lijie Li 113975f710084997abdb26ad5fa03e8e_*_Yaonan Hou
author	Lijie Li Yaonan Hou
author2	Alfred Moore Lijie Li Hang Shao Xiaoyan Tang Huili Liang Zengxia Mei Yaonan Hou
format	Journal article
container_title	AIP Advances
container_volume	15
container_issue	4
publishDate	2025
institution	Swansea University
issn	2158-3226
doi_str_mv	10.1063/5.0260023
publisher	AIP Publishing
college_str	Faculty of Science and Engineering
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hierarchy_top_title	Faculty of Science and Engineering
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department_str	School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Aerospace Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Aerospace Engineering
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description	Memristors are regarded as a key electronic component for non-von Neumann computing, such as neuromorphic networks. Hereby, we report a capacitance-coupled memristor (C-memristor) configured with ITO/Ga2O3/ITO coplanar interdigital structures. Depending on the voltage sweeping directions, the C-memristor exhibits a clear current switching with different polarities, offering an easy-to-readout electronic status. Due to the coupled capacitance, the difference between the currents in forward and reverse scanning strongly depends on the voltage sweeping speed, which was quantitatively studied with an equivalent circuit that we established. A device model based on filamentary conductive paths formed by the electrically driven oxygen vacancies was utilized to explain the working mechanism of the C-memristor, which aligns well with the observed results. Unlike previously reported Ga2O3 memristors that rely only on the status of the resistance, our device also exhibits capacitance variation, offering an additional degree of freedom (e.g., the power nodes) for constructing a neural network.
published_date	2025-04-04T05:26:11Z
_version_	1851369530127810560
score	11.089572

A capacitance-coupled Ga2O3 memristor

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