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Photocurrent dynamics and carrier transport of amorphous-Ga2O3 metal–semiconductor–metal deep ultraviolet photodetectors

Yaonan Hou Orcid Logo, Emirhan Kutsal Orcid Logo, Alfred Moore Orcid Logo, Jonathan Evans, Huili Liang, Zengxia Mei Orcid Logo, Lijie Li Orcid Logo

Applied Physics Letters, Volume: 127, Issue: 5

Swansea University Authors: Yaonan Hou Orcid Logo, Lijie Li Orcid Logo

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DOI (Published version): 10.1063/5.0285457

Abstract

This work presents a systematic study in the photocurrent transport and transient dynamics in amorphous Ga2O3-based deep ultraviolet (DUV) photodetectors, which are configured with a co- planar metal–semiconductor–metal structure, with high performances including a DUV/dark current contrast ratio of...

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Published in: Applied Physics Letters
ISSN: 0003-6951 1077-3118
Published: AIP Publishing 2025
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URI: https://cronfa.swan.ac.uk/Record/cronfa70616
Abstract: This work presents a systematic study in the photocurrent transport and transient dynamics in amorphous Ga2O3-based deep ultraviolet (DUV) photodetectors, which are configured with a co- planar metal–semiconductor–metal structure, with high performances including a DUV/dark current contrast ratio of 106 and a photoresponsivity of 25.3A/W. Under steady-state DUV excitation, an analytical current–voltage relationship is developed to describe the carrier transport behaviors. Under the pulsed-DUV excitation and post-DUV exposure, the current rise and decay dynamics have been investigated, which enables us to clarify the role of intrinsic defects in the photoresponse and response speed. In addition, we also propose a criterion to adequately evaluate the photoresponsivity of Ga2O3- based DUV photodetectors with slow photocurrent decays.
College: Faculty of Science and Engineering
Funders: This work was supported by the EPSRC under Grant No. EP/T019085/1 and the Royal Society under Grant No. IEC/NSFC242145. H.L. and Z.M. thank the support from NSFC under Grant Nos. 12174275 and 62174113.
Issue: 5

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