No Cover Image

Journal article 159 views 17 downloads

Photocurrent dynamics and carrier transport of amorphous-Ga2O3 metal–semiconductor–metal deep ultraviolet photodetectors

Yaonan Hou Orcid Logo, Emirhan Kutsal Orcid Logo, Alfred Moore Orcid Logo, Jonathan Evans, Huili Liang, Zengxia Mei Orcid Logo, Lijie Li Orcid Logo

Applied Physics Letters, Volume: 127, Issue: 5

Swansea University Authors: Yaonan Hou Orcid Logo, Lijie Li Orcid Logo

  • 70616.VoR.pdf

    PDF | Version of Record

    Copyright: 2025 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.

    Download (2.41MB)

Check full text

DOI (Published version): 10.1063/5.0285457

Abstract

This work presents a systematic study in the photocurrent transport and transient dynamics in amorphous Ga2O3-based deep ultraviolet (DUV) photodetectors, which are configured with a co- planar metal–semiconductor–metal structure, with high performances including a DUV/dark current contrast ratio of...

Full description

Published in: Applied Physics Letters
ISSN: 0003-6951 1077-3118
Published: AIP Publishing 2025
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa70616
first_indexed 2025-10-09T08:11:17Z
last_indexed 2025-12-13T05:30:01Z
id cronfa70616
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2025-12-12T13:22:35.9334854</datestamp><bib-version>v2</bib-version><id>70616</id><entry>2025-10-09</entry><title>Photocurrent dynamics and carrier transport of amorphous-Ga2O3 metal&#x2013;semiconductor&#x2013;metal deep ultraviolet photodetectors</title><swanseaauthors><author><sid>113975f710084997abdb26ad5fa03e8e</sid><ORCID>0000-0001-9461-3841</ORCID><firstname>Yaonan</firstname><surname>Hou</surname><name>Yaonan Hou</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>ed2c658b77679a28e4c1dcf95af06bd6</sid><ORCID>0000-0003-4630-7692</ORCID><firstname>Lijie</firstname><surname>Li</surname><name>Lijie Li</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2025-10-09</date><deptcode>ACEM</deptcode><abstract>This work presents a systematic study in the photocurrent transport and transient dynamics in amorphous Ga2O3-based deep ultraviolet (DUV) photodetectors, which are configured with a co- planar metal&#x2013;semiconductor&#x2013;metal structure, with high performances including a DUV/dark current contrast ratio of 106 and a photoresponsivity of 25.3A/W. Under steady-state DUV excitation, an analytical current&#x2013;voltage relationship is developed to describe the carrier transport behaviors. Under the pulsed-DUV excitation and post-DUV exposure, the current rise and decay dynamics have been investigated, which enables us to clarify the role of intrinsic defects in the photoresponse and response speed. In addition, we also propose a criterion to adequately evaluate the photoresponsivity of Ga2O3- based DUV photodetectors with slow photocurrent decays.</abstract><type>Journal Article</type><journal>Applied Physics Letters</journal><volume>127</volume><journalNumber>5</journalNumber><paginationStart/><paginationEnd/><publisher>AIP Publishing</publisher><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint>0003-6951</issnPrint><issnElectronic>1077-3118</issnElectronic><keywords/><publishedDay>7</publishedDay><publishedMonth>8</publishedMonth><publishedYear>2025</publishedYear><publishedDate>2025-08-07</publishedDate><doi>10.1063/5.0285457</doi><url/><notes/><college>COLLEGE NANME</college><department>Aerospace, Civil, Electrical, and Mechanical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>ACEM</DepartmentCode><institution>Swansea University</institution><apcterm>SU Library paid the OA fee (TA Institutional Deal)</apcterm><funders>This work was supported by the EPSRC under Grant No. EP/T019085/1 and the Royal Society under Grant No. IEC/NSFC242145. H.L. and Z.M. thank the support from NSFC under Grant Nos. 12174275 and 62174113.</funders><projectreference/><lastEdited>2025-12-12T13:22:35.9334854</lastEdited><Created>2025-10-09T09:09:50.2118764</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Yaonan</firstname><surname>Hou</surname><orcid>0000-0001-9461-3841</orcid><order>1</order></author><author><firstname>Emirhan</firstname><surname>Kutsal</surname><orcid>0009-0006-1989-6064</orcid><order>2</order></author><author><firstname>Alfred</firstname><surname>Moore</surname><orcid>0009-0008-3374-5638</orcid><order>3</order></author><author><firstname>Jonathan</firstname><surname>Evans</surname><order>4</order></author><author><firstname>Huili</firstname><surname>Liang</surname><order>5</order></author><author><firstname>Zengxia</firstname><surname>Mei</surname><orcid>0000-0002-2034-659x</orcid><order>6</order></author><author><firstname>Lijie</firstname><surname>Li</surname><orcid>0000-0003-4630-7692</orcid><order>7</order></author></authors><documents><document><filename>70616__35811__2dc45a1f53ce432c81e39915729cf7de.pdf</filename><originalFilename>70616.VoR.pdf</originalFilename><uploaded>2025-12-12T13:15:08.9362619</uploaded><type>Output</type><contentLength>2526163</contentLength><contentType>application/pdf</contentType><version>Version of Record</version><cronfaStatus>true</cronfaStatus><documentNotes>Copyright: 2025 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.</documentNotes><copyrightCorrect>true</copyrightCorrect><language>eng</language><licence>https://creativecommons.org/licenses/by/4.0/</licence></document></documents><OutputDurs/></rfc1807>
spelling 2025-12-12T13:22:35.9334854 v2 70616 2025-10-09 Photocurrent dynamics and carrier transport of amorphous-Ga2O3 metal–semiconductor–metal deep ultraviolet photodetectors 113975f710084997abdb26ad5fa03e8e 0000-0001-9461-3841 Yaonan Hou Yaonan Hou true false ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2025-10-09 ACEM This work presents a systematic study in the photocurrent transport and transient dynamics in amorphous Ga2O3-based deep ultraviolet (DUV) photodetectors, which are configured with a co- planar metal–semiconductor–metal structure, with high performances including a DUV/dark current contrast ratio of 106 and a photoresponsivity of 25.3A/W. Under steady-state DUV excitation, an analytical current–voltage relationship is developed to describe the carrier transport behaviors. Under the pulsed-DUV excitation and post-DUV exposure, the current rise and decay dynamics have been investigated, which enables us to clarify the role of intrinsic defects in the photoresponse and response speed. In addition, we also propose a criterion to adequately evaluate the photoresponsivity of Ga2O3- based DUV photodetectors with slow photocurrent decays. Journal Article Applied Physics Letters 127 5 AIP Publishing 0003-6951 1077-3118 7 8 2025 2025-08-07 10.1063/5.0285457 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University SU Library paid the OA fee (TA Institutional Deal) This work was supported by the EPSRC under Grant No. EP/T019085/1 and the Royal Society under Grant No. IEC/NSFC242145. H.L. and Z.M. thank the support from NSFC under Grant Nos. 12174275 and 62174113. 2025-12-12T13:22:35.9334854 2025-10-09T09:09:50.2118764 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Yaonan Hou 0000-0001-9461-3841 1 Emirhan Kutsal 0009-0006-1989-6064 2 Alfred Moore 0009-0008-3374-5638 3 Jonathan Evans 4 Huili Liang 5 Zengxia Mei 0000-0002-2034-659x 6 Lijie Li 0000-0003-4630-7692 7 70616__35811__2dc45a1f53ce432c81e39915729cf7de.pdf 70616.VoR.pdf 2025-12-12T13:15:08.9362619 Output 2526163 application/pdf Version of Record true Copyright: 2025 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license. true eng https://creativecommons.org/licenses/by/4.0/
title Photocurrent dynamics and carrier transport of amorphous-Ga2O3 metal–semiconductor–metal deep ultraviolet photodetectors
spellingShingle Photocurrent dynamics and carrier transport of amorphous-Ga2O3 metal–semiconductor–metal deep ultraviolet photodetectors
Yaonan Hou
Lijie Li
title_short Photocurrent dynamics and carrier transport of amorphous-Ga2O3 metal–semiconductor–metal deep ultraviolet photodetectors
title_full Photocurrent dynamics and carrier transport of amorphous-Ga2O3 metal–semiconductor–metal deep ultraviolet photodetectors
title_fullStr Photocurrent dynamics and carrier transport of amorphous-Ga2O3 metal–semiconductor–metal deep ultraviolet photodetectors
title_full_unstemmed Photocurrent dynamics and carrier transport of amorphous-Ga2O3 metal–semiconductor–metal deep ultraviolet photodetectors
title_sort Photocurrent dynamics and carrier transport of amorphous-Ga2O3 metal–semiconductor–metal deep ultraviolet photodetectors
author_id_str_mv 113975f710084997abdb26ad5fa03e8e
ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv 113975f710084997abdb26ad5fa03e8e_***_Yaonan Hou
ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Yaonan Hou
Lijie Li
author2 Yaonan Hou
Emirhan Kutsal
Alfred Moore
Jonathan Evans
Huili Liang
Zengxia Mei
Lijie Li
format Journal article
container_title Applied Physics Letters
container_volume 127
container_issue 5
publishDate 2025
institution Swansea University
issn 0003-6951
1077-3118
doi_str_mv 10.1063/5.0285457
publisher AIP Publishing
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description This work presents a systematic study in the photocurrent transport and transient dynamics in amorphous Ga2O3-based deep ultraviolet (DUV) photodetectors, which are configured with a co- planar metal–semiconductor–metal structure, with high performances including a DUV/dark current contrast ratio of 106 and a photoresponsivity of 25.3A/W. Under steady-state DUV excitation, an analytical current–voltage relationship is developed to describe the carrier transport behaviors. Under the pulsed-DUV excitation and post-DUV exposure, the current rise and decay dynamics have been investigated, which enables us to clarify the role of intrinsic defects in the photoresponse and response speed. In addition, we also propose a criterion to adequately evaluate the photoresponsivity of Ga2O3- based DUV photodetectors with slow photocurrent decays.
published_date 2025-08-07T05:31:54Z
_version_ 1856805707879284736
score 11.095862

Similar Items