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3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor

A Martinez, N Seoane, A.R Brown, J.R Barker, A Asenov, Antonio Martinez Muniz Orcid Logo

IEEE Transactions on Nanotechnology, Volume: 8, Issue: 5, Pages: 603 - 610

Swansea University Author: Antonio Martinez Muniz Orcid Logo

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Published in: IEEE Transactions on Nanotechnology
ISSN: 1536-125X 1941-0085
Published: 2009
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Item Description: This was part of an initiative between Glasgow University and UCL to combine first principles simulations of materials with device simulation methodologies, in order to produce more predictive simulation results for future solid-state transistors “Meeting the material challenges of nanoCMOS electronics” (GR/S80097/01).
College: Faculty of Science and Engineering
Issue: 5
Start Page: 603
End Page: 610