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3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor
A Martinez,
N Seoane,
A.R Brown,
J.R Barker,
A Asenov,
Antonio Martinez Muniz 
IEEE Transactions on Nanotechnology, Volume: 8, Issue: 5, Pages: 603 - 610
Swansea University Author:
Antonio Martinez Muniz
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DOI (Published version): 10.1109/tnano.2009.2020980
Abstract
3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor
| Published in: | IEEE Transactions on Nanotechnology |
|---|---|
| ISSN: | 1536-125X 1941-0085 |
| Published: |
2009
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa10566 |
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| Item Description: |
This was part of an initiative between Glasgow University and UCL to combine first principles simulations of materials with device simulation methodologies, in order to produce more predictive simulation results for future solid-state transistors “Meeting the material challenges of nanoCMOS electronics” (GR/S80097/01). |
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| College: |
Faculty of Science and Engineering |
| Issue: |
5 |
| Start Page: |
603 |
| End Page: |
610 |