No Cover Image

Journal article 695 views

3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor

A Martinez, N Seoane, A.R Brown, J.R Barker, A Asenov, Antonio Martinez Muniz Orcid Logo

IEEE Transactions on Nanotechnology, Volume: 8, Issue: 5, Pages: 603 - 610

Swansea University Author: Antonio Martinez Muniz Orcid Logo

Full text not available from this repository: check for access using links below.

Published in: IEEE Transactions on Nanotechnology
ISSN: 1536-125X 1941-0085
Published: 2009
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa10566
Tags: Add Tag
No Tags, Be the first to tag this record!
Item Description: This was part of an initiative between Glasgow University and UCL to combine first principles simulations of materials with device simulation methodologies, in order to produce more predictive simulation results for future solid-state transistors “Meeting the material challenges of nanoCMOS electronics” (GR/S80097/01).
College: College of Engineering
Issue: 5
Start Page: 603
End Page: 610