Journal article 1056 views
A detailed coupled-mode-space non-equilibrium Green's function simulation study of source-to-drain tunnelling in gate-all-around Si nanowire metal oxide semiconductor field effect transistors
N. Seoane,
A. Martinez,
Antonio Martinez Muniz 
Journal of Applied Physics, Volume: 114, Issue: 10, Start page: 104307
Swansea University Author:
Antonio Martinez Muniz
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1063/1.4820390
Abstract
A detailed coupled-mode-space non-equilibrium Green's function simulation study of source-to-drain tunnelling in gate-all-around Si nanowire metal oxide semiconductor field effect transistors
| Published in: | Journal of Applied Physics |
|---|---|
| Published: |
2013
|
| URI: | https://cronfa.swan.ac.uk/Record/cronfa22747 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| College: |
Faculty of Science and Engineering |
|---|---|
| Issue: |
10 |
| Start Page: |
104307 |