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Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors

M Aldegunde, A Martinez, A Asenov, Antonio Martinez Muniz Orcid Logo

Journal of Applied Physics, Volume: 110, Issue: 9, Start page: 094518

Swansea University Author: Antonio Martinez Muniz Orcid Logo

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DOI (Published version): 10.1063/1.3658856

Published in: Journal of Applied Physics
ISSN: 0021-8979
Published: 2011
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Item Description: The 3D Non-equilibrium Green’s Function device simulator contributed to SINANO and the EU Network of Excellence and has been used in the comparison and evaluation of other tools developed there. My NEGF simulators benefitted the partners in GR/S80097/01 including Synopsis, Sematech and IBM. The implementation of dissipative physics in a quantum device simulator is a significant leap forward in the accurate assessment of future devices. This will pave the way in the development of new TCAD tools for smaller devices
College: Faculty of Science and Engineering
Issue: 9
Start Page: 094518