No Cover Image

Journal article 954 views 204 downloads

Electrothermal simulations of Si and III-V nanowire field effect transistors: A non-equilibrium Green's function study

A. Price, Antonio Martinez Muniz Orcid Logo

Journal of Applied Physics, Volume: 122, Issue: 7, Start page: 074502

Swansea University Author: Antonio Martinez Muniz Orcid Logo

Check full text

DOI (Published version): 10.1063/1.4998681

Abstract

Electro-thermal simulations in ultrascaled Si and InGaAs nanowire field effect transistors have been carried out. Devices with 2.2 × 2.2 nm2 and 3.6 × 3.6 nm2 cross-sections have been investigated. All the standard phonon scattering mechanisms for Si and InGaAs such as optical, polar optical (only f...

Full description

Published in: Journal of Applied Physics
ISSN: 0021-8979 1089-7550
Published: AIP Publishing 2017
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa56024
Tags: Add Tag
No Tags, Be the first to tag this record!
Abstract: Electro-thermal simulations in ultrascaled Si and InGaAs nanowire field effect transistors have been carried out. Devices with 2.2 × 2.2 nm2 and 3.6 × 3.6 nm2 cross-sections have been investigated. All the standard phonon scattering mechanisms for Si and InGaAs such as optical, polar optical (only for InGaAs), and acoustic phonon mechanisms have been considered. The Non-Equilibrium Green's Function formalism in concomitance with a renormalised 3D heat equation has been used to investigate the effect of self-heating. In addition, locally resolved electron power dissipation and temperature profiles have been extracted. The simulations showed that the heat dissipated inside the transistor increases as the nanowire cross-section decreases. It is also demonstrated that the commonly assumed Joule-heat dissipation overestimates the power dissipated in the transistors studied. It was found that in comparison with standard scattering simulations, electrothermal simulations caused a 72% and 85% decrease in the current in 2.2 × 2.2 nm2 cross-section Si and InGaAs core NanoWire Field Effect Transistors , respectively, when compared with ballistic simulations. The corresponding decrease for scattering without self-heating was 45% and 70% respectively.
College: Faculty of Science and Engineering
Issue: 7
Start Page: 074502

Similar Items