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Electrothermal simulations of Si and III-V nanowire field effect transistors: A non-equilibrium Green's function study

A. Price, Antonio Martinez Muniz Orcid Logo

Journal of Applied Physics, Volume: 122, Issue: 7, Start page: 074502

Swansea University Author: Antonio Martinez Muniz Orcid Logo

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DOI (Published version): 10.1063/1.4998681

Abstract

Electro-thermal simulations in ultrascaled Si and InGaAs nanowire field effect transistors have been carried out. Devices with 2.2 × 2.2 nm2 and 3.6 × 3.6 nm2 cross-sections have been investigated. All the standard phonon scattering mechanisms for Si and InGaAs such as optical, polar optical (only f...

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Published in: Journal of Applied Physics
ISSN: 0021-8979 1089-7550
Published: AIP Publishing 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa56024
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fullrecord <?xml version="1.0"?><rfc1807><datestamp>2021-06-01T09:49:49.4169496</datestamp><bib-version>v2</bib-version><id>56024</id><entry>2021-01-13</entry><title>Electrothermal simulations of Si and III-V nanowire field effect transistors: A non-equilibrium Green's function study</title><swanseaauthors><author><sid>cd433784251add853672979313f838ec</sid><ORCID>0000-0001-8131-7242</ORCID><firstname>Antonio</firstname><surname>Martinez Muniz</surname><name>Antonio Martinez Muniz</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2021-01-13</date><deptcode>EEEG</deptcode><abstract>Electro-thermal simulations in ultrascaled Si and InGaAs nanowire field effect transistors have been carried out. Devices with 2.2 &#xD7; 2.2 nm2 and 3.6 &#xD7; 3.6 nm2 cross-sections have been investigated. All the standard phonon scattering mechanisms for Si and InGaAs such as optical, polar optical (only for InGaAs), and acoustic phonon mechanisms have been considered. The Non-Equilibrium Green's Function formalism in concomitance with a renormalised 3D heat equation has been used to investigate the effect of self-heating. In addition, locally resolved electron power dissipation and temperature profiles have been extracted. The simulations showed that the heat dissipated inside the transistor increases as the nanowire cross-section decreases. It is also demonstrated that the commonly assumed Joule-heat dissipation overestimates the power dissipated in the transistors studied. It was found that in comparison with standard scattering simulations, electrothermal simulations caused a 72% and 85% decrease in the current in 2.2 &#xD7; 2.2 nm2 cross-section Si and InGaAs core NanoWire Field Effect Transistors , respectively, when compared with ballistic simulations. The corresponding decrease for scattering without self-heating was 45% and 70% respectively.</abstract><type>Journal Article</type><journal>Journal of Applied Physics</journal><volume>122</volume><journalNumber>7</journalNumber><paginationStart>074502</paginationStart><paginationEnd/><publisher>AIP Publishing</publisher><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint>0021-8979</issnPrint><issnElectronic>1089-7550</issnElectronic><keywords/><publishedDay>21</publishedDay><publishedMonth>8</publishedMonth><publishedYear>2017</publishedYear><publishedDate>2017-08-21</publishedDate><doi>10.1063/1.4998681</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2021-06-01T09:49:49.4169496</lastEdited><Created>2021-01-13T11:59:42.0743306</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Biosciences, Geography and Physics - Physics</level></path><authors><author><firstname>A.</firstname><surname>Price</surname><order>1</order></author><author><firstname>Antonio</firstname><surname>Martinez Muniz</surname><orcid>0000-0001-8131-7242</orcid><order>2</order></author></authors><documents><document><filename>56024__19051__4dca3738e600486c97145554ddc3cceb.pdf</filename><originalFilename>56024.VOR.pdf</originalFilename><uploaded>2021-01-13T12:49:44.4822110</uploaded><type>Output</type><contentLength>2137695</contentLength><contentType>application/pdf</contentType><version>Version of Record</version><cronfaStatus>true</cronfaStatus><documentNotes>&#xA9; 2017 Author(s)</documentNotes><copyrightCorrect>true</copyrightCorrect><language>eng</language></document></documents><OutputDurs/></rfc1807>
spelling 2021-06-01T09:49:49.4169496 v2 56024 2021-01-13 Electrothermal simulations of Si and III-V nanowire field effect transistors: A non-equilibrium Green's function study cd433784251add853672979313f838ec 0000-0001-8131-7242 Antonio Martinez Muniz Antonio Martinez Muniz true false 2021-01-13 EEEG Electro-thermal simulations in ultrascaled Si and InGaAs nanowire field effect transistors have been carried out. Devices with 2.2 × 2.2 nm2 and 3.6 × 3.6 nm2 cross-sections have been investigated. All the standard phonon scattering mechanisms for Si and InGaAs such as optical, polar optical (only for InGaAs), and acoustic phonon mechanisms have been considered. The Non-Equilibrium Green's Function formalism in concomitance with a renormalised 3D heat equation has been used to investigate the effect of self-heating. In addition, locally resolved electron power dissipation and temperature profiles have been extracted. The simulations showed that the heat dissipated inside the transistor increases as the nanowire cross-section decreases. It is also demonstrated that the commonly assumed Joule-heat dissipation overestimates the power dissipated in the transistors studied. It was found that in comparison with standard scattering simulations, electrothermal simulations caused a 72% and 85% decrease in the current in 2.2 × 2.2 nm2 cross-section Si and InGaAs core NanoWire Field Effect Transistors , respectively, when compared with ballistic simulations. The corresponding decrease for scattering without self-heating was 45% and 70% respectively. Journal Article Journal of Applied Physics 122 7 074502 AIP Publishing 0021-8979 1089-7550 21 8 2017 2017-08-21 10.1063/1.4998681 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2021-06-01T09:49:49.4169496 2021-01-13T11:59:42.0743306 Faculty of Science and Engineering School of Biosciences, Geography and Physics - Physics A. Price 1 Antonio Martinez Muniz 0000-0001-8131-7242 2 56024__19051__4dca3738e600486c97145554ddc3cceb.pdf 56024.VOR.pdf 2021-01-13T12:49:44.4822110 Output 2137695 application/pdf Version of Record true © 2017 Author(s) true eng
title Electrothermal simulations of Si and III-V nanowire field effect transistors: A non-equilibrium Green's function study
spellingShingle Electrothermal simulations of Si and III-V nanowire field effect transistors: A non-equilibrium Green's function study
Antonio Martinez Muniz
title_short Electrothermal simulations of Si and III-V nanowire field effect transistors: A non-equilibrium Green's function study
title_full Electrothermal simulations of Si and III-V nanowire field effect transistors: A non-equilibrium Green's function study
title_fullStr Electrothermal simulations of Si and III-V nanowire field effect transistors: A non-equilibrium Green's function study
title_full_unstemmed Electrothermal simulations of Si and III-V nanowire field effect transistors: A non-equilibrium Green's function study
title_sort Electrothermal simulations of Si and III-V nanowire field effect transistors: A non-equilibrium Green's function study
author_id_str_mv cd433784251add853672979313f838ec
author_id_fullname_str_mv cd433784251add853672979313f838ec_***_Antonio Martinez Muniz
author Antonio Martinez Muniz
author2 A. Price
Antonio Martinez Muniz
format Journal article
container_title Journal of Applied Physics
container_volume 122
container_issue 7
container_start_page 074502
publishDate 2017
institution Swansea University
issn 0021-8979
1089-7550
doi_str_mv 10.1063/1.4998681
publisher AIP Publishing
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Biosciences, Geography and Physics - Physics{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Biosciences, Geography and Physics - Physics
document_store_str 1
active_str 0
description Electro-thermal simulations in ultrascaled Si and InGaAs nanowire field effect transistors have been carried out. Devices with 2.2 × 2.2 nm2 and 3.6 × 3.6 nm2 cross-sections have been investigated. All the standard phonon scattering mechanisms for Si and InGaAs such as optical, polar optical (only for InGaAs), and acoustic phonon mechanisms have been considered. The Non-Equilibrium Green's Function formalism in concomitance with a renormalised 3D heat equation has been used to investigate the effect of self-heating. In addition, locally resolved electron power dissipation and temperature profiles have been extracted. The simulations showed that the heat dissipated inside the transistor increases as the nanowire cross-section decreases. It is also demonstrated that the commonly assumed Joule-heat dissipation overestimates the power dissipated in the transistors studied. It was found that in comparison with standard scattering simulations, electrothermal simulations caused a 72% and 85% decrease in the current in 2.2 × 2.2 nm2 cross-section Si and InGaAs core NanoWire Field Effect Transistors , respectively, when compared with ballistic simulations. The corresponding decrease for scattering without self-heating was 45% and 70% respectively.
published_date 2017-08-21T04:10:39Z
_version_ 1763753736933474304
score 11.035634

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