No Cover Image

Journal article 1180 views

Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors

M Aldegunde, A Martinez, A Asenov, Antonio Martinez Muniz Orcid Logo

Journal of Applied Physics, Volume: 110, Issue: 9, Start page: 094518

Swansea University Author: Antonio Martinez Muniz Orcid Logo

Full text not available from this repository: check for access using links below.

Check full text

DOI (Published version): 10.1063/1.3658856

Published in: Journal of Applied Physics
ISSN: 0021-8979
Published: 2011
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa10580
Tags: Add Tag
No Tags, Be the first to tag this record!
first_indexed 2013-07-23T12:06:48Z
last_indexed 2018-02-09T04:39:29Z
id cronfa10580
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2016-08-17T13:50:37.0486279</datestamp><bib-version>v2</bib-version><id>10580</id><entry>2013-09-03</entry><title>Non-equilibrium Green&#x2019;s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors</title><swanseaauthors><author><sid>cd433784251add853672979313f838ec</sid><ORCID>0000-0001-8131-7242</ORCID><firstname>Antonio</firstname><surname>Martinez Muniz</surname><name>Antonio Martinez Muniz</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>EEEG</deptcode><abstract></abstract><type>Journal Article</type><journal>Journal of Applied Physics</journal><volume>110</volume><journalNumber>9</journalNumber><paginationStart>094518</paginationStart><publisher/><issnPrint>0021-8979</issnPrint><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2011</publishedYear><publishedDate>2011-12-31</publishedDate><doi>10.1063/1.3658856</doi><url/><notes>The 3D Non-equilibrium Green&#x2019;s Function device simulator contributed to SINANO and the EU Network of Excellence and has been used in the comparison and evaluation of other tools developed there. My NEGF simulators benefitted the partners in GR/S80097/01 including Synopsis, Sematech and IBM. The implementation of dissipative physics in a quantum device simulator is a significant leap forward in the accurate assessment of future devices. This will pave the way in the development of new TCAD tools for smaller devices</notes><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2016-08-17T13:50:37.0486279</lastEdited><Created>2013-09-03T06:39:07.0000000</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>M</firstname><surname>Aldegunde</surname><order>1</order></author><author><firstname>A</firstname><surname>Martinez</surname><order>2</order></author><author><firstname>A</firstname><surname>Asenov</surname><order>3</order></author><author><firstname>Antonio</firstname><surname>Martinez Muniz</surname><orcid>0000-0001-8131-7242</orcid><order>4</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2016-08-17T13:50:37.0486279 v2 10580 2013-09-03 Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors cd433784251add853672979313f838ec 0000-0001-8131-7242 Antonio Martinez Muniz Antonio Martinez Muniz true false 2013-09-03 EEEG Journal Article Journal of Applied Physics 110 9 094518 0021-8979 31 12 2011 2011-12-31 10.1063/1.3658856 The 3D Non-equilibrium Green’s Function device simulator contributed to SINANO and the EU Network of Excellence and has been used in the comparison and evaluation of other tools developed there. My NEGF simulators benefitted the partners in GR/S80097/01 including Synopsis, Sematech and IBM. The implementation of dissipative physics in a quantum device simulator is a significant leap forward in the accurate assessment of future devices. This will pave the way in the development of new TCAD tools for smaller devices COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2016-08-17T13:50:37.0486279 2013-09-03T06:39:07.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering M Aldegunde 1 A Martinez 2 A Asenov 3 Antonio Martinez Muniz 0000-0001-8131-7242 4
title Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors
spellingShingle Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors
Antonio Martinez Muniz
title_short Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors
title_full Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors
title_fullStr Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors
title_full_unstemmed Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors
title_sort Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors
author_id_str_mv cd433784251add853672979313f838ec
author_id_fullname_str_mv cd433784251add853672979313f838ec_***_Antonio Martinez Muniz
author Antonio Martinez Muniz
author2 M Aldegunde
A Martinez
A Asenov
Antonio Martinez Muniz
format Journal article
container_title Journal of Applied Physics
container_volume 110
container_issue 9
container_start_page 094518
publishDate 2011
institution Swansea University
issn 0021-8979
doi_str_mv 10.1063/1.3658856
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2011-12-31T03:12:00Z
_version_ 1763750047040667648
score 11.012678

Similar Items