Journal article 1163 views
Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study
Antonio Martinez Muniz,
Antonio Martinez Muniz 
IEEE Transactions on Electron Devices, Volume: 56, Issue: 7
Swansea University Author:
Antonio Martinez Muniz
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DOI (Published version): 10.1109/ted.2009.2021357
Abstract
Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study
| Published in: | IEEE Transactions on Electron Devices |
|---|---|
| Published: |
2009
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa10565 |
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| College: |
Faculty of Science and Engineering |
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| Issue: |
7 |