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Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study

Antonio Martinez Muniz, Antonio Martinez Muniz Orcid Logo

IEEE Transactions on Electron Devices, Volume: 56, Issue: 7

Swansea University Author: Antonio Martinez Muniz Orcid Logo

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DOI (Published version): 10.1109/ted.2009.2021357

Published in: IEEE Transactions on Electron Devices
Published: 2009
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College: Faculty of Science and Engineering
Issue: 7