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Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study

Antonio Martinez Muniz, Antonio Martinez Muniz

IEEE Transactions on Electron Devices, Volume: 56, Issue: 7

Swansea University Author: Antonio Martinez Muniz

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DOI (Published version): 10.1109/ted.2009.2021357

Published in: IEEE Transactions on Electron Devices
Published: 2009
URI: https://cronfa.swan.ac.uk/Record/cronfa10565
first_indexed 2013-07-23T12:06:45Z
last_indexed 2018-02-09T04:39:27Z
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spelling 2013-06-10T12:00:09.0137729 v2 10565 2013-09-03 Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study cd433784251add853672979313f838ec Antonio Martinez Muniz Antonio Martinez Muniz true false 2013-09-03 Journal Article IEEE Transactions on Electron Devices 56 7 31 12 2009 2009-12-31 10.1109/ted.2009.2021357 COLLEGE NANME COLLEGE CODE Swansea University 2013-06-10T12:00:09.0137729 2013-09-03T06:38:36.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Antonio Martinez Muniz 1 Antonio Martinez Muniz 2
title Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study
spellingShingle Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study
Antonio Martinez Muniz
title_short Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study
title_full Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study
title_fullStr Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study
title_full_unstemmed Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study
title_sort Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study
author_id_str_mv cd433784251add853672979313f838ec
author_id_fullname_str_mv cd433784251add853672979313f838ec_***_Antonio Martinez Muniz
author Antonio Martinez Muniz
author2 Antonio Martinez Muniz
Antonio Martinez Muniz
format Journal article
container_title IEEE Transactions on Electron Devices
container_volume 56
container_issue 7
publishDate 2009
institution Swansea University
doi_str_mv 10.1109/ted.2009.2021357
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
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active_str 0
published_date 2009-12-31T03:18:34Z
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