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Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study

Antonio Martinez Muniz, Antonio Martinez Muniz Orcid Logo

IEEE Transactions on Electron Devices, Volume: 56, Issue: 7

Swansea University Author: Antonio Martinez Muniz Orcid Logo

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DOI (Published version): 10.1109/ted.2009.2021357

Published in: IEEE Transactions on Electron Devices
Published: 2009
URI: https://cronfa.swan.ac.uk/Record/cronfa10565
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first_indexed 2013-07-23T12:06:45Z
last_indexed 2018-02-09T04:39:27Z
id cronfa10565
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2013-06-10T12:00:09.0137729</datestamp><bib-version>v2</bib-version><id>10565</id><entry>2013-09-03</entry><title>Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study</title><swanseaauthors><author><sid>cd433784251add853672979313f838ec</sid><ORCID>0000-0001-8131-7242</ORCID><firstname>Antonio</firstname><surname>Martinez Muniz</surname><name>Antonio Martinez Muniz</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>EEEG</deptcode><abstract></abstract><type>Journal Article</type><journal>IEEE Transactions on Electron Devices</journal><volume>56</volume><journalNumber>7</journalNumber><paginationStart/><paginationEnd/><publisher/><placeOfPublication/><issnPrint/><issnElectronic/><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2009</publishedYear><publishedDate>2009-12-31</publishedDate><doi>10.1109/ted.2009.2021357</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2013-06-10T12:00:09.0137729</lastEdited><Created>2013-09-03T06:38:36.0000000</Created><path><level id="1">College of Engineering</level><level id="2">Engineering</level></path><authors><author><firstname>Antonio Martinez</firstname><surname>Muniz</surname><order>1</order></author><author><firstname>Antonio</firstname><surname>Martinez Muniz</surname><orcid>0000-0001-8131-7242</orcid><order>2</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2013-06-10T12:00:09.0137729 v2 10565 2013-09-03 Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study cd433784251add853672979313f838ec 0000-0001-8131-7242 Antonio Martinez Muniz Antonio Martinez Muniz true false 2013-09-03 EEEG Journal Article IEEE Transactions on Electron Devices 56 7 31 12 2009 2009-12-31 10.1109/ted.2009.2021357 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2013-06-10T12:00:09.0137729 2013-09-03T06:38:36.0000000 College of Engineering Engineering Antonio Martinez Muniz 1 Antonio Martinez Muniz 0000-0001-8131-7242 2
title Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study
spellingShingle Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study
Antonio Martinez Muniz
title_short Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study
title_full Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study
title_fullStr Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study
title_full_unstemmed Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study
title_sort Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study
author_id_str_mv cd433784251add853672979313f838ec
author_id_fullname_str_mv cd433784251add853672979313f838ec_***_Antonio Martinez Muniz
author Antonio Martinez Muniz
author2 Antonio Martinez Muniz
Antonio Martinez Muniz
format Journal article
container_title IEEE Transactions on Electron Devices
container_volume 56
container_issue 7
publishDate 2009
institution Swansea University
doi_str_mv 10.1109/ted.2009.2021357
college_str College of Engineering
hierarchytype
hierarchy_top_id collegeofengineering
hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
document_store_str 0
active_str 0
published_date 2009-12-31T03:20:05Z
_version_ 1737024450225766400
score 10.900257