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Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study

Antonio Martinez Muniz, Antonio Martinez Muniz Orcid Logo

IEEE Transactions on Electron Devices, Volume: 57, Issue: 7

Swansea University Author: Antonio Martinez Muniz Orcid Logo

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DOI (Published version): 10.1109/ted.2010.2048405

Published in: IEEE Transactions on Electron Devices
Published: 2010
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College: Faculty of Science and Engineering
Issue: 7