Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study
| Date first appeared online | |
| DOI | 10.1109/ted.2010.2048405 |
| Authors | Martinez Muniz A. |
| Journal Name | IEEE Transactions on Electron Devices |
| Volume | 57 |