Journal article 1099 views
3D NEGF simulation of ‘ab initio’ scattering from discrete dopants in the source and drain of a nanowire transistor
Antonio Martinez Muniz,
Antonio Martinez Muniz 
Swansea University Author:
Antonio Martinez Muniz
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DOI (Published version): 10.1109/snw.2008.5418462
Abstract
3D NEGF simulation of ‘ab initio’ scattering from discrete dopants in the source and drain of a nanowire transistor
| Published: |
2008
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|---|---|
| URI: | https://cronfa.swan.ac.uk/Record/cronfa10588 |
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2013-07-23T12:06:50Z |
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2018-02-09T04:39:30Z |
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cronfa10588 |
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| fullrecord |
<?xml version="1.0"?><rfc1807><datestamp>2013-06-10T12:02:12.6327775</datestamp><bib-version>v2</bib-version><id>10588</id><entry>2013-09-03</entry><title>3D NEGF simulation of &#x2018;ab initio&#x2019; scattering from discrete dopants in the source and drain of a nanowire transistor</title><swanseaauthors><author><sid>cd433784251add853672979313f838ec</sid><ORCID>0000-0001-8131-7242</ORCID><firstname>Antonio</firstname><surname>Martinez Muniz</surname><name>Antonio Martinez Muniz</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>EEEG</deptcode><abstract></abstract><type>Journal Article</type><journal></journal><volume></volume><journalNumber></journalNumber><paginationStart/><paginationEnd/><publisher/><placeOfPublication/><issnPrint/><issnElectronic/><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2008</publishedYear><publishedDate>2008-12-31</publishedDate><doi>10.1109/snw.2008.5418462</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2013-06-10T12:02:12.6327775</lastEdited><Created>2013-09-03T06:39:20.0000000</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Antonio Martinez</firstname><surname>Muniz</surname><order>1</order></author><author><firstname>Antonio</firstname><surname>Martinez Muniz</surname><orcid>0000-0001-8131-7242</orcid><order>2</order></author></authors><documents/><OutputDurs/></rfc1807> |
| spelling |
2013-06-10T12:02:12.6327775 v2 10588 2013-09-03 3D NEGF simulation of ‘ab initio’ scattering from discrete dopants in the source and drain of a nanowire transistor cd433784251add853672979313f838ec 0000-0001-8131-7242 Antonio Martinez Muniz Antonio Martinez Muniz true false 2013-09-03 EEEG Journal Article 31 12 2008 2008-12-31 10.1109/snw.2008.5418462 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2013-06-10T12:02:12.6327775 2013-09-03T06:39:20.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Antonio Martinez Muniz 1 Antonio Martinez Muniz 0000-0001-8131-7242 2 |
| title |
3D NEGF simulation of ‘ab initio’ scattering from discrete dopants in the source and drain of a nanowire transistor |
| spellingShingle |
3D NEGF simulation of ‘ab initio’ scattering from discrete dopants in the source and drain of a nanowire transistor Antonio Martinez Muniz |
| title_short |
3D NEGF simulation of ‘ab initio’ scattering from discrete dopants in the source and drain of a nanowire transistor |
| title_full |
3D NEGF simulation of ‘ab initio’ scattering from discrete dopants in the source and drain of a nanowire transistor |
| title_fullStr |
3D NEGF simulation of ‘ab initio’ scattering from discrete dopants in the source and drain of a nanowire transistor |
| title_full_unstemmed |
3D NEGF simulation of ‘ab initio’ scattering from discrete dopants in the source and drain of a nanowire transistor |
| title_sort |
3D NEGF simulation of ‘ab initio’ scattering from discrete dopants in the source and drain of a nanowire transistor |
| author_id_str_mv |
cd433784251add853672979313f838ec |
| author_id_fullname_str_mv |
cd433784251add853672979313f838ec_***_Antonio Martinez Muniz |
| author |
Antonio Martinez Muniz |
| author2 |
Antonio Martinez Muniz Antonio Martinez Muniz |
| format |
Journal article |
| publishDate |
2008 |
| institution |
Swansea University |
| doi_str_mv |
10.1109/snw.2008.5418462 |
| college_str |
Faculty of Science and Engineering |
| hierarchytype |
|
| hierarchy_top_id |
facultyofscienceandengineering |
| hierarchy_top_title |
Faculty of Science and Engineering |
| hierarchy_parent_id |
facultyofscienceandengineering |
| hierarchy_parent_title |
Faculty of Science and Engineering |
| department_str |
School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering |
| document_store_str |
0 |
| active_str |
0 |
| published_date |
2008-12-31T03:12:01Z |
| _version_ |
1763750047772573696 |
| score |
11.035634 |