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3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors / Manuel Aldegunde; Antonio Jesus Garcia-Loureiro; Karol Kalna
IEEE Transactions on Electron Devices, Volume: 60, Issue: 5, Pages: 1561 - 1567
Swansea University Author: Kalna, Karol
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3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
|Published in:||IEEE Transactions on Electron Devices|
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The first Finite Element ensemble Monte Carlo simulation toolbox with quantum corrections was developed showing an excellent agreement with experimental I-V characteristics for the 25 nm gate length SOI Si FinFET. This opens a new horizon for physically based state-of-the art TCAD simulations of nanoscale device for future digital, RF, and sensing applications with a predictive power. The work resulted from my 5-year EPSRC Advanced Research Fellowship and a 3-year EPSRC grant on modelling of metal-semiconductor interfaces.
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