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3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors

Manuel Aldegunde, Antonio Jesus Garcia-Loureiro, Karol Kalna Orcid Logo

IEEE Transactions on Electron Devices, Volume: 60, Issue: 5, Pages: 1561 - 1567

Swansea University Author: Karol Kalna Orcid Logo

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Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: 2013
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Item Description: The first Finite Element ensemble Monte Carlo simulation toolbox with quantum corrections was developed showing an excellent agreement with experimental I-V characteristics for the 25 nm gate length SOI Si FinFET. This opens a new horizon for physically based state-of-the art TCAD simulations of nanoscale device for future digital, RF, and sensing applications with a predictive power. The work resulted from my 5-year EPSRC Advanced Research Fellowship and a 3-year EPSRC grant on modelling of metal-semiconductor interfaces.
College: Faculty of Science and Engineering
Issue: 5
Start Page: 1561
End Page: 1567