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3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors / Karol, Kalna

IEEE Transactions on Electron Devices, Volume: 60, Issue: 5, Pages: 1561 - 1567

Swansea University Author: Karol, Kalna

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Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: 2013
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URI: https://cronfa.swan.ac.uk/Record/cronfa14745
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last_indexed 2018-02-09T04:46:20Z
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spelling 2015-05-30T21:08:58.9117193 v2 14745 2013-09-03 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2013-09-03 EEN Journal Article IEEE Transactions on Electron Devices 60 5 1561 1567 0018-9383 1557-9646 31 12 2013 2013-12-31 10.1109/ted.2013.2253465 The first Finite Element ensemble Monte Carlo simulation toolbox with quantum corrections was developed showing an excellent agreement with experimental I-V characteristics for the 25 nm gate length SOI Si FinFET. This opens a new horizon for physically based state-of-the art TCAD simulations of nanoscale device for future digital, RF, and sensing applications with a predictive power. The work resulted from my 5-year EPSRC Advanced Research Fellowship and a 3-year EPSRC grant on modelling of metal-semiconductor interfaces. COLLEGE NANME Engineering COLLEGE CODE EEN Swansea University 2015-05-30T21:08:58.9117193 2013-09-03T06:36:37.0000000 College of Engineering Engineering Manuel Aldegunde 1 Antonio Jesus Garcia-Loureiro 2 Karol Kalna 0000-0002-6333-9189 3
title 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
spellingShingle 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
Karol, Kalna
title_short 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
title_full 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
title_fullStr 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
title_full_unstemmed 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
title_sort 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol, Kalna
author Karol, Kalna
format Journal article
container_title IEEE Transactions on Electron Devices
container_volume 60
container_issue 5
container_start_page 1561
publishDate 2013
institution Swansea University
issn 0018-9383
1557-9646
doi_str_mv 10.1109/ted.2013.2253465
college_str College of Engineering
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hierarchy_top_id collegeofengineering
hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
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published_date 2013-12-31T13:25:00Z
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