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3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors

Manuel Aldegunde, Antonio Jesus Garcia-Loureiro, Karol Kalna Orcid Logo

IEEE Transactions on Electron Devices, Volume: 60, Issue: 5, Pages: 1561 - 1567

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1109/ted.2013.2253465

Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: 2013
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URI: https://cronfa.swan.ac.uk/Record/cronfa14745
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first_indexed 2013-07-23T12:13:30Z
last_indexed 2018-02-09T04:46:20Z
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fullrecord <?xml version="1.0"?><rfc1807><datestamp>2015-05-30T21:08:58.9117193</datestamp><bib-version>v2</bib-version><id>14745</id><entry>2013-09-03</entry><title>3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors</title><swanseaauthors><author><sid>1329a42020e44fdd13de2f20d5143253</sid><ORCID>0000-0002-6333-9189</ORCID><firstname>Karol</firstname><surname>Kalna</surname><name>Karol Kalna</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>EEEG</deptcode><abstract></abstract><type>Journal Article</type><journal>IEEE Transactions on Electron Devices</journal><volume>60</volume><journalNumber>5</journalNumber><paginationStart>1561</paginationStart><paginationEnd>1567</paginationEnd><publisher/><issnPrint>0018-9383</issnPrint><issnElectronic>1557-9646</issnElectronic><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2013</publishedYear><publishedDate>2013-12-31</publishedDate><doi>10.1109/ted.2013.2253465</doi><url/><notes>The first Finite Element ensemble Monte Carlo simulation toolbox with quantum corrections was developed showing an excellent agreement with experimental I-V characteristics for the 25 nm gate length SOI Si FinFET. This opens a new horizon for physically based state-of-the art TCAD simulations of nanoscale device for future digital, RF, and sensing applications with a predictive power. The work resulted from my 5-year EPSRC Advanced Research Fellowship and a 3-year EPSRC grant on modelling of metal-semiconductor interfaces.</notes><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2015-05-30T21:08:58.9117193</lastEdited><Created>2013-09-03T06:36:37.0000000</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Manuel</firstname><surname>Aldegunde</surname><order>1</order></author><author><firstname>Antonio Jesus</firstname><surname>Garcia-Loureiro</surname><order>2</order></author><author><firstname>Karol</firstname><surname>Kalna</surname><orcid>0000-0002-6333-9189</orcid><order>3</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2015-05-30T21:08:58.9117193 v2 14745 2013-09-03 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2013-09-03 EEEG Journal Article IEEE Transactions on Electron Devices 60 5 1561 1567 0018-9383 1557-9646 31 12 2013 2013-12-31 10.1109/ted.2013.2253465 The first Finite Element ensemble Monte Carlo simulation toolbox with quantum corrections was developed showing an excellent agreement with experimental I-V characteristics for the 25 nm gate length SOI Si FinFET. This opens a new horizon for physically based state-of-the art TCAD simulations of nanoscale device for future digital, RF, and sensing applications with a predictive power. The work resulted from my 5-year EPSRC Advanced Research Fellowship and a 3-year EPSRC grant on modelling of metal-semiconductor interfaces. COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2015-05-30T21:08:58.9117193 2013-09-03T06:36:37.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Manuel Aldegunde 1 Antonio Jesus Garcia-Loureiro 2 Karol Kalna 0000-0002-6333-9189 3
title 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
spellingShingle 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
Karol Kalna
title_short 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
title_full 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
title_fullStr 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
title_full_unstemmed 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
title_sort 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 Manuel Aldegunde
Antonio Jesus Garcia-Loureiro
Karol Kalna
format Journal article
container_title IEEE Transactions on Electron Devices
container_volume 60
container_issue 5
container_start_page 1561
publishDate 2013
institution Swansea University
issn 0018-9383
1557-9646
doi_str_mv 10.1109/ted.2013.2253465
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2013-12-31T03:16:53Z
_version_ 1763750354676088832
score 11.016235

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