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3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors / Manuel Aldegunde; Antonio Jesus Garcia-Loureiro; Karol Kalna

IEEE Transactions on Electron Devices, Volume: 60, Issue: 5, Pages: 1561 - 1567

Swansea University Author: Kalna, Karol

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Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: 2013
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URI: https://cronfa.swan.ac.uk/Record/cronfa14745
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last_indexed 2018-02-09T04:46:20Z
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fullrecord <?xml version="1.0"?><rfc1807><datestamp>2015-05-30T21:08:58Z</datestamp><bib-version>v2</bib-version><id>14745</id><entry>2013-09-03</entry><title>3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors</title><alternativeTitle></alternativeTitle><author>Karol Kalna</author><firstname>Karol</firstname><surname>Kalna</surname><active>true</active><ORCID>0000-0002-6333-9189</ORCID><ethesisStudent>false</ethesisStudent><sid>1329a42020e44fdd13de2f20d5143253</sid><email>d6fd3b4aefad8f1e66f965f17d1793fe</email><emailaddr>NVeOTrAv+CP5pVGfFOuC+oJSbZF11mHm1K8NtCGVMYw=</emailaddr><date>2013-09-03</date><deptcode>EEN</deptcode><abstract></abstract><type>Journal article</type><journal>IEEE Transactions on Electron Devices</journal><volume>60</volume><journalNumber>5</journalNumber><paginationStart>1561</paginationStart><paginationEnd>1567</paginationEnd><publisher></publisher><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint>0018-9383</issnPrint><issnElectronic>1557-9646</issnElectronic><keywords></keywords><publishedDay>0</publishedDay><publishedMonth>0</publishedMonth><publishedYear>2013</publishedYear><publishedDate>2013-01-01</publishedDate><doi>10.1109/ted.2013.2253465</doi><url></url><notes>The first Finite Element ensemble Monte Carlo simulation toolbox with quantum corrections was developed showing an excellent agreement with experimental I-V characteristics for the 25 nm gate length SOI Si FinFET. This opens a new horizon for physically based state-of-the art TCAD simulations of nanoscale device for future digital, RF, and sensing applications with a predictive power. The work resulted from my 5-year EPSRC Advanced Research Fellowship and a 3-year EPSRC grant on modelling of metal-semiconductor interfaces.</notes><college>College of Engineering</college><department>Engineering</department><CollegeCode>CENG</CollegeCode><DepartmentCode>EEN</DepartmentCode><institution/><researchGroup>Electronic Systems Design Centre</researchGroup><supervisor/><sponsorsfunders/><grantnumber/><degreelevel/><degreename></degreename><lastEdited>2015-05-30T21:08:58Z</lastEdited><Created>2013-09-03T06:36:37Z</Created><path><level id="1">College of Engineering</level><level id="2">Engineering</level></path><authors><author><firstname>Manuel</firstname><surname>Aldegunde</surname><orcid/><order>1</order></author><author><firstname>Antonio Jesus</firstname><surname>Garcia-Loureiro</surname><orcid/><order>2</order></author><author><firstname>Karol</firstname><surname>Kalna</surname><orcid/><order>3</order></author></authors><documents/></rfc1807>
spelling 2015-05-30T21:08:58Z v2 14745 2013-09-03 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors Karol Kalna Karol Kalna true 0000-0002-6333-9189 false 1329a42020e44fdd13de2f20d5143253 d6fd3b4aefad8f1e66f965f17d1793fe NVeOTrAv+CP5pVGfFOuC+oJSbZF11mHm1K8NtCGVMYw= 2013-09-03 EEN Journal article IEEE Transactions on Electron Devices 60 5 1561 1567 0018-9383 1557-9646 0 0 2013 2013-01-01 10.1109/ted.2013.2253465 The first Finite Element ensemble Monte Carlo simulation toolbox with quantum corrections was developed showing an excellent agreement with experimental I-V characteristics for the 25 nm gate length SOI Si FinFET. This opens a new horizon for physically based state-of-the art TCAD simulations of nanoscale device for future digital, RF, and sensing applications with a predictive power. The work resulted from my 5-year EPSRC Advanced Research Fellowship and a 3-year EPSRC grant on modelling of metal-semiconductor interfaces. College of Engineering Engineering CENG EEN Electronic Systems Design Centre 2015-05-30T21:08:58Z 2013-09-03T06:36:37Z College of Engineering Engineering Manuel Aldegunde 1 Antonio Jesus Garcia-Loureiro 2 Karol Kalna 3
title 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
spellingShingle 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
Kalna, Karol
title_short 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
title_full 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
title_fullStr 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
title_full_unstemmed 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
title_sort 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Kalna, Karol
author Kalna, Karol
author2 Manuel Aldegunde
Antonio Jesus Garcia-Loureiro
Karol Kalna
format Journal article
container_title IEEE Transactions on Electron Devices
container_volume 60
container_issue 5
container_start_page 1561
publishDate 2013
institution Swansea University
issn 0018-9383
1557-9646
doi_str_mv 10.1109/ted.2013.2253465
college_str College of Engineering
hierarchytype
hierarchy_top_id collegeofengineering
hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
document_store_str 0
active_str 1
researchgroup_str Electronic Systems Design Centre
published_date 2013-01-01T12:31:54Z
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score 10.808875