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Conference Paper/Proceeding/Abstract 1112 views

Monte Carlo simulations of channel scaling to ultimate limit in Si and In<inf>0.3</inf>Ga<inf>0.7</inf>As bulk MOSFETs

Aynul Islam, Karol Kalna Orcid Logo

Pages: 321 - 324

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1109/asdam.2010.5666362

Published: 2010
URI: https://cronfa.swan.ac.uk/Record/cronfa14754
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first_indexed 2013-07-23T12:13:31Z
last_indexed 2018-02-09T04:46:20Z
id cronfa14754
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2013-05-30T11:56:27.7701501</datestamp><bib-version>v2</bib-version><id>14754</id><entry>2013-09-03</entry><title>Monte Carlo simulations of channel scaling to ultimate limit in Si and In&lt;inf&gt;0.3&lt;/inf&gt;Ga&lt;inf&gt;0.7&lt;/inf&gt;As bulk MOSFETs</title><swanseaauthors><author><sid>1329a42020e44fdd13de2f20d5143253</sid><ORCID>0000-0002-6333-9189</ORCID><firstname>Karol</firstname><surname>Kalna</surname><name>Karol Kalna</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>EEEG</deptcode><abstract></abstract><type>Conference Paper/Proceeding/Abstract</type><journal></journal><volume></volume><journalNumber></journalNumber><paginationStart>321</paginationStart><paginationEnd>324</paginationEnd><publisher/><placeOfPublication/><issnPrint/><issnElectronic/><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2010</publishedYear><publishedDate>2010-12-31</publishedDate><doi>10.1109/asdam.2010.5666362</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2013-05-30T11:56:27.7701501</lastEdited><Created>2013-09-03T06:36:50.0000000</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Aynul</firstname><surname>Islam</surname><order>1</order></author><author><firstname>Karol</firstname><surname>Kalna</surname><orcid>0000-0002-6333-9189</orcid><order>2</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2013-05-30T11:56:27.7701501 v2 14754 2013-09-03 Monte Carlo simulations of channel scaling to ultimate limit in Si and In<inf>0.3</inf>Ga<inf>0.7</inf>As bulk MOSFETs 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2013-09-03 EEEG Conference Paper/Proceeding/Abstract 321 324 31 12 2010 2010-12-31 10.1109/asdam.2010.5666362 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2013-05-30T11:56:27.7701501 2013-09-03T06:36:50.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Aynul Islam 1 Karol Kalna 0000-0002-6333-9189 2
title Monte Carlo simulations of channel scaling to ultimate limit in Si and In<inf>0.3</inf>Ga<inf>0.7</inf>As bulk MOSFETs
spellingShingle Monte Carlo simulations of channel scaling to ultimate limit in Si and In<inf>0.3</inf>Ga<inf>0.7</inf>As bulk MOSFETs
Karol Kalna
title_short Monte Carlo simulations of channel scaling to ultimate limit in Si and In<inf>0.3</inf>Ga<inf>0.7</inf>As bulk MOSFETs
title_full Monte Carlo simulations of channel scaling to ultimate limit in Si and In<inf>0.3</inf>Ga<inf>0.7</inf>As bulk MOSFETs
title_fullStr Monte Carlo simulations of channel scaling to ultimate limit in Si and In<inf>0.3</inf>Ga<inf>0.7</inf>As bulk MOSFETs
title_full_unstemmed Monte Carlo simulations of channel scaling to ultimate limit in Si and In<inf>0.3</inf>Ga<inf>0.7</inf>As bulk MOSFETs
title_sort Monte Carlo simulations of channel scaling to ultimate limit in Si and In<inf>0.3</inf>Ga<inf>0.7</inf>As bulk MOSFETs
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 Aynul Islam
Karol Kalna
format Conference Paper/Proceeding/Abstract
container_start_page 321
publishDate 2010
institution Swansea University
doi_str_mv 10.1109/asdam.2010.5666362
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2010-12-31T03:16:54Z
_version_ 1763750355400654848
score 11.016235