### Monte Carlo simulations of spin transport in nanoscale$\mathrm{In_{0.7}Ga_{0.3}As}$ transistors: temperature and size effects

Ben Thorpe, SOPHIE SCHIRMER, Karol Kalna

Semiconductor Science and Technology, Volume: 37, Issue: 7, Start page: 075009

Swansea University Authors:

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© 2022 The Author(s). Released under the terms of the Creative Commons Attribution 4.0 licence

DOI (Published version): 10.1088/1361-6641/ac70f0

Abstract

Spin-based metal-oxide-semiconductor field-effect transistors (MOSFETs) with a high-mobility III-V channel are studied using self-consistent quantum corrected ensemble Monte Carlo device simulations of charge and spin transport. The simulations including spin–orbit coupling mechanisms (Dresselhaus a...

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Published in: Semiconductor Science and Technology 0268-1242 1361-6641 IOP Publishing 2022 https://cronfa.swan.ac.uk/Record/cronfa60258 No Tags, Be the first to tag this record!
Abstract: Spin-based metal-oxide-semiconductor field-effect transistors (MOSFETs) with a high-mobility III-V channel are studied using self-consistent quantum corrected ensemble Monte Carlo device simulations of charge and spin transport. The simulations including spin–orbit coupling mechanisms (Dresselhaus and Rashba coupling) examine the electron spin transport in the 25 nm gate length $\mathrm{In_{0.7}Ga_{0.3}As}$ MOSFET. The transistor lateral dimensions (the gate length, the source-to-gate, and the gate-to-drain spacers) are increased to investigate the spin-dependent drain current modulation induced by the gate from room temperature of 300 K down to 77 K. This modulation increases with increasing temperature due to increased Rashba coupling. Finally, an increase of up to 20 nm in the gate length, source-to-gate, or the gate-to-drain spacers increases the spin polarization and enhances the spin-dependent drain current modulation at the drain due to polarization-refocusing effects. InGaAs FET, spin transport, Dresselhaus and Rashba coupling, Monte Carlo simulation Faculty of Science and Engineering B T appreciated the support for his studentship, and S S and K K for the research from the Sˆer Cymru National Research Network in Advanced Engineering by Welsh Government. 7 075009