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Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor / B. Thorpe, Karol Kalna, F. C. Langbein, Sophie Shermer

Journal of Applied Physics, Volume: 122, Issue: 22, Start page: 223903

Swansea University Authors: Karol Kalna, Sophie Shermer

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DOI (Published version): 10.1063/1.4994148

Published in: Journal of Applied Physics
ISSN: 0021-8979 1089-7550
Published: AIP Publishing 2017
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Keywords: spintronics, nanoscale device modelling, Monte Carlo simulations
College: College of Science
Issue: 22
Start Page: 223903