Journal article 1404 views
Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold
Journal of Low Power Electronics, Volume: 11, Issue: 2, Pages: 256 - 262
Swansea University Author:
Karol Kalna
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DOI (Published version): 10.1166/jolpe.2015.1371
Abstract
Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold
Published in: | Journal of Low Power Electronics |
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Published: |
2015
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URI: | https://cronfa.swan.ac.uk/Record/cronfa25046 |
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College: |
Faculty of Science and Engineering |
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Issue: |
2 |
Start Page: |
256 |
End Page: |
262 |