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Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold

G. Indalecio, N. Seoane, M. Aldegunde, K. Kalna, A. J. García-Loureiro, Karol Kalna Orcid Logo

Journal of Low Power Electronics, Volume: 11, Issue: 2, Pages: 256 - 262

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1166/jolpe.2015.1371

Published in: Journal of Low Power Electronics
Published: 2015
URI: https://cronfa.swan.ac.uk/Record/cronfa25046
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first_indexed 2015-12-15T02:13:09Z
last_indexed 2018-02-09T05:05:26Z
id cronfa25046
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2015-12-13T15:47:03.4373241</datestamp><bib-version>v2</bib-version><id>25046</id><entry>2015-12-13</entry><title>Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold</title><swanseaauthors><author><sid>1329a42020e44fdd13de2f20d5143253</sid><ORCID>0000-0002-6333-9189</ORCID><firstname>Karol</firstname><surname>Kalna</surname><name>Karol Kalna</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2015-12-13</date><deptcode>EEEG</deptcode><abstract/><type>Journal Article</type><journal>Journal of Low Power Electronics</journal><volume>11</volume><journalNumber>2</journalNumber><paginationStart>256</paginationStart><paginationEnd>262</paginationEnd><publisher/><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2015</publishedYear><publishedDate>2015-12-31</publishedDate><doi>10.1166/jolpe.2015.1371</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2015-12-13T15:47:03.4373241</lastEdited><Created>2015-12-13T15:47:03.4373241</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>G.</firstname><surname>Indalecio</surname><order>1</order></author><author><firstname>N.</firstname><surname>Seoane</surname><order>2</order></author><author><firstname>M.</firstname><surname>Aldegunde</surname><order>3</order></author><author><firstname>K.</firstname><surname>Kalna</surname><order>4</order></author><author><firstname>A. J.</firstname><surname>Garc&#xED;a-Loureiro</surname><order>5</order></author><author><firstname>Karol</firstname><surname>Kalna</surname><orcid>0000-0002-6333-9189</orcid><order>6</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2015-12-13T15:47:03.4373241 v2 25046 2015-12-13 Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2015-12-13 EEEG Journal Article Journal of Low Power Electronics 11 2 256 262 31 12 2015 2015-12-31 10.1166/jolpe.2015.1371 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2015-12-13T15:47:03.4373241 2015-12-13T15:47:03.4373241 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering G. Indalecio 1 N. Seoane 2 M. Aldegunde 3 K. Kalna 4 A. J. García-Loureiro 5 Karol Kalna 0000-0002-6333-9189 6
title Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold
spellingShingle Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold
Karol Kalna
title_short Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold
title_full Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold
title_fullStr Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold
title_full_unstemmed Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold
title_sort Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 G. Indalecio
N. Seoane
M. Aldegunde
K. Kalna
A. J. García-Loureiro
Karol Kalna
format Journal article
container_title Journal of Low Power Electronics
container_volume 11
container_issue 2
container_start_page 256
publishDate 2015
institution Swansea University
doi_str_mv 10.1166/jolpe.2015.1371
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2015-12-31T03:29:47Z
_version_ 1763751165461266432
score 10.997866

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