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The correlation of electronic properties with nanoscale morphological variations measured by SPM on semiconductor devices / P R Dunstan; T G G Maffeïs; M P Ackland; G T Owen; S P Wilks; Peter Dunstan
Journal of Physics: Condensed Matter, Volume: 15, Issue: 42, Pages: S3095 - S3112
Swansea University Author: Peter, Dunstan
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The correlation of electronic properties with nanoscale morphological variations measured by SPM on semiconductor devices
|Published in:||Journal of Physics: Condensed Matter|
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This invited special issue highlighted scanning tunnelling microscopy and scanning near-field optical microscopy applied to surfaces and interfaces. Dunstan's contribution was as principal investigator in the 50% of the paper concerning SNOM studies of Schottky barriers on silicon carbide. Nanoscale variations measured by photocurrents showed an inhomogeneous buried interface.
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