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The correlation of electronic properties with nanoscale morphological variations measured by SPM on semiconductor devices / P R Dunstan; T G G Maffeïs; M P Ackland; G T Owen; S P Wilks; Peter Dunstan

Journal of Physics: Condensed Matter, Volume: 15, Issue: 42, Pages: S3095 - S3112

Swansea University Author: Peter, Dunstan

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Published in: Journal of Physics: Condensed Matter
ISSN: 0953-8984 1361-648X
Published: 2003
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Item Description: This invited special issue highlighted scanning tunnelling microscopy and scanning near-field optical microscopy applied to surfaces and interfaces. Dunstan's contribution was as principal investigator in the 50% of the paper concerning SNOM studies of Schottky barriers on silicon carbide. Nanoscale variations measured by photocurrents showed an inhomogeneous buried interface.
College: College of Science
Issue: 42
Start Page: S3095
End Page: S3112