Journal article 920 views
The correlation of electronic properties with nanoscale morphological variations measured by SPM on semiconductor devices
P R Dunstan,
T G G Maffeïs,
M P Ackland,
G T Owen,
S P Wilks,
Peter Dunstan 
Journal of Physics: Condensed Matter, Volume: 15, Issue: 42, Pages: S3095 - S3112
Swansea University Author:
Peter Dunstan
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DOI (Published version): 10.1088/0953-8984/15/42/008
Abstract
The correlation of electronic properties with nanoscale morphological variations measured by SPM on semiconductor devices
| Published in: | Journal of Physics: Condensed Matter |
|---|---|
| ISSN: | 0953-8984 1361-648X |
| Published: |
2003
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa1548 |
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| Item Description: |
This invited special issue highlighted scanning tunnelling microscopy and scanning near-field optical microscopy applied to surfaces and interfaces. Dunstan's contribution was as principal investigator in the 50% of the paper concerning SNOM studies of Schottky barriers on silicon carbide. Nanoscale variations measured by photocurrents showed an inhomogeneous buried interface. |
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| College: |
Faculty of Science and Engineering |
| Issue: |
42 |
| Start Page: |
S3095 |
| End Page: |
S3112 |