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Investigation of annealing effects on the adsorption of Ni on 4H-SiC(0001) surfaces using scanning tunneling microscopy and spectroscopy

I. P Blackwood, K. S Teng, T. G. G Maffeïs, J. R Franks, S. P Wilks, Vincent Teng Orcid Logo, Thierry Maffeis Orcid Logo

Start page: 105528

Swansea University Authors: Vincent Teng Orcid Logo, Thierry Maffeis Orcid Logo

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DOI (Published version): 10.1063/1.2136423

Published: 2005
URI: https://cronfa.swan.ac.uk/Record/cronfa1848
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spelling 2011-10-01T00:00:00.0000000 v2 1848 2011-10-01 Investigation of annealing effects on the adsorption of Ni on 4H-SiC(0001) surfaces using scanning tunneling microscopy and spectroscopy 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 992eb4cb18b61c0cd3da6e0215ac787c 0000-0003-2357-0092 Thierry Maffeis Thierry Maffeis true false 2011-10-01 EEEG Journal Article 105528 31 12 2005 2005-12-31 10.1063/1.2136423 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2011-10-01T00:00:00.0000000 2011-10-01T00:00:00.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering I. P Blackwood 1 K. S Teng 2 T. G. G Maffeïs 3 J. R Franks 4 S. P Wilks 5 Vincent Teng 0000-0003-4325-8573 6 Thierry Maffeis 0000-0003-2357-0092 7
title Investigation of annealing effects on the adsorption of Ni on 4H-SiC(0001) surfaces using scanning tunneling microscopy and spectroscopy
spellingShingle Investigation of annealing effects on the adsorption of Ni on 4H-SiC(0001) surfaces using scanning tunneling microscopy and spectroscopy
Vincent Teng
Thierry Maffeis
title_short Investigation of annealing effects on the adsorption of Ni on 4H-SiC(0001) surfaces using scanning tunneling microscopy and spectroscopy
title_full Investigation of annealing effects on the adsorption of Ni on 4H-SiC(0001) surfaces using scanning tunneling microscopy and spectroscopy
title_fullStr Investigation of annealing effects on the adsorption of Ni on 4H-SiC(0001) surfaces using scanning tunneling microscopy and spectroscopy
title_full_unstemmed Investigation of annealing effects on the adsorption of Ni on 4H-SiC(0001) surfaces using scanning tunneling microscopy and spectroscopy
title_sort Investigation of annealing effects on the adsorption of Ni on 4H-SiC(0001) surfaces using scanning tunneling microscopy and spectroscopy
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
992eb4cb18b61c0cd3da6e0215ac787c
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
992eb4cb18b61c0cd3da6e0215ac787c_***_Thierry Maffeis
author Vincent Teng
Thierry Maffeis
author2 I. P Blackwood
K. S Teng
T. G. G Maffeïs
J. R Franks
S. P Wilks
Vincent Teng
Thierry Maffeis
format Journal article
container_start_page 105528
publishDate 2005
institution Swansea University
doi_str_mv 10.1063/1.2136423
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2005-12-31T03:04:46Z
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score 11.016258

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