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The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy

P. R. Dunstan, S. P. Wilks, K. S. Teng, M. A. Pritchard, R. H. Williams, Vincent Teng Orcid Logo

Journal of Applied Physics, Volume: 86, Issue: 10, Start page: 5636

Swansea University Author: Vincent Teng Orcid Logo

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DOI (Published version): 10.1063/1.371573

Published in: Journal of Applied Physics
ISSN: 00218979
Published: 1999
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College: Faculty of Science and Engineering
Issue: 10
Start Page: 5636