No Cover Image

Journal article 517 views

The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy

P. R. Dunstan, S. P. Wilks, K. S. Teng, M. A. Pritchard, R. H. Williams, Vincent Teng Orcid Logo

Journal of Applied Physics, Volume: 86, Issue: 10, Start page: 5636

Swansea University Author: Vincent Teng Orcid Logo

Full text not available from this repository: check for access using links below.

Check full text

DOI (Published version): 10.1063/1.371573

Published in: Journal of Applied Physics
ISSN: 00218979
Published: 1999
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa31375
Tags: Add Tag
No Tags, Be the first to tag this record!
College: College of Engineering
Issue: 10
Start Page: 5636