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The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy / P. R. Dunstan, S. P. Wilks, K. S. Teng, M. A. Pritchard, R. H. Williams, Vincent Teng

Journal of Applied Physics, Volume: 86, Issue: 10, Start page: 5636

Swansea University Author: Vincent Teng

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DOI (Published version): 10.1063/1.371573

Published in: Journal of Applied Physics
ISSN: 00218979
Published: 1999
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College: College of Engineering
Issue: 10
Start Page: 5636