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The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving / K. S Teng, P. R Dunstan, S. P Wilks, R. H Williams, Vincent Teng
Applied Physics Letters, Volume: 75, Issue: 17, Start page: 2590
Swansea University Author: Vincent Teng
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The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving
|Published in:||Applied Physics Letters|
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