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The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving / K. S Teng, P. R Dunstan, S. P Wilks, R. H Williams, Vincent Teng

Applied Physics Letters, Volume: 75, Issue: 17, Start page: 2590

Swansea University Author: Vincent Teng

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DOI (Published version): 10.1063/1.125087

Published in: Applied Physics Letters
ISSN: 0003-6951
Published: 1999
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College: College of Engineering
Issue: 17
Start Page: 2590