Journal article 975 views 227 downloads
Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors
O. Kryvchenkova,
Richard Cobley 
,
Karol Kalna
,
Karol Kalna
Applied Surface Science, Volume: 295, Pages: 173 - 179
Swansea University Authors:
Richard Cobley , Karol Kalna
-
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DOI (Published version): 10.1016/j.apsusc.2013.12.182
Abstract
A simulation methodology to model tunnelling spectroscopy measurements based on the Price-Radcliffe formalism has been developed within a finite element device simulator. The tip-sample system is modelled self-consistently including tip-induced bending and realistic tip shapes. The resulting spectra...
| Published in: | Applied Surface Science |
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| ISSN: | 0169-4332 |
| Published: |
2014
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa21323 |
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| Abstract: |
A simulation methodology to model tunnelling spectroscopy measurements based on the Price-Radcliffe formalism has been developed within a finite element device simulator. The tip-sample system is modelled self-consistently including tip-induced bending and realistic tip shapes. The resulting spectra of III–V semiconductors are compared against experimental results and a model based on the Bardeen tunnelling approach with very good agreement. We have found that the image force induced barrier lowering increases the tunnelling current by three orders of magnitude when tunnelling to the sample valence band, and by six orders of magnitude when tunnelling to the sample conduction band. The work shows that other models which use a single weighting factor to account for image force in the conduction and valence band are likely to be underestimating the valence band current by three orders of magnitude. |
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| Keywords: |
Nanowires, current crowding, contacts |
| College: |
Faculty of Science and Engineering |
| Start Page: |
173 |
| End Page: |
179 |