No Cover Image

Journal article 1006 views 235 downloads

Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors

O. Kryvchenkova, Richard Cobley Orcid Logo, Karol Kalna Orcid Logo

Applied Surface Science, Volume: 295, Pages: 173 - 179

Swansea University Authors: Richard Cobley Orcid Logo, Karol Kalna Orcid Logo

Check full text

DOI (Published version): 10.1016/j.apsusc.2013.12.182

Abstract

A simulation methodology to model tunnelling spectroscopy measurements based on the Price-Radcliffe formalism has been developed within a finite element device simulator. The tip-sample system is modelled self-consistently including tip-induced bending and realistic tip shapes. The resulting spectra...

Full description

Published in: Applied Surface Science
ISSN: 0169-4332
Published: 2014
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa21323
Tags: Add Tag
No Tags, Be the first to tag this record!
first_indexed 2015-05-13T02:11:55Z
last_indexed 2023-01-11T13:52:25Z
id cronfa21323
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2022-10-10T15:52:07.4508314</datestamp><bib-version>v2</bib-version><id>21323</id><entry>2015-05-12</entry><title>Self-consistent modelling of tunnelling spectroscopy on III&#x2013;V semiconductors</title><swanseaauthors><author><sid>2ce7e1dd9006164425415a35fa452494</sid><ORCID>0000-0003-4833-8492</ORCID><firstname>Richard</firstname><surname>Cobley</surname><name>Richard Cobley</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>1329a42020e44fdd13de2f20d5143253</sid><ORCID>0000-0002-6333-9189</ORCID><firstname>Karol</firstname><surname>Kalna</surname><name>Karol Kalna</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2015-05-12</date><deptcode>EEEG</deptcode><abstract>A simulation methodology to model tunnelling spectroscopy measurements based on the Price-Radcliffe formalism has been developed within a finite element device simulator. The tip-sample system is modelled self-consistently including tip-induced bending and realistic tip shapes. The resulting spectra of III&#x2013;V semiconductors are compared against experimental results and a model based on the Bardeen tunnelling approach with very good agreement. We have found that the image force induced barrier lowering increases the tunnelling current by three orders of magnitude when tunnelling to the sample valence band, and by six orders of magnitude when tunnelling to the sample conduction band. The work shows that other models which use a single weighting factor to account for image force in the conduction and valence band are likely to be underestimating the valence band current by three orders of magnitude.</abstract><type>Journal Article</type><journal>Applied Surface Science</journal><volume>295</volume><journalNumber/><paginationStart>173</paginationStart><paginationEnd>179</paginationEnd><publisher/><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint>0169-4332</issnPrint><issnElectronic/><keywords>Nanowires, current crowding, contacts</keywords><publishedDay>15</publishedDay><publishedMonth>3</publishedMonth><publishedYear>2014</publishedYear><publishedDate>2014-03-15</publishedDate><doi>10.1016/j.apsusc.2013.12.182</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><funders/><projectreference/><lastEdited>2022-10-10T15:52:07.4508314</lastEdited><Created>2015-05-12T10:54:35.5593247</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>O.</firstname><surname>Kryvchenkova</surname><order>1</order></author><author><firstname>Richard</firstname><surname>Cobley</surname><orcid>0000-0003-4833-8492</orcid><order>2</order></author><author><firstname>Karol</firstname><surname>Kalna</surname><orcid>0000-0002-6333-9189</orcid><order>3</order></author></authors><documents><document><filename>0021323-15052015134426.pdf</filename><originalFilename>Self-consistent__modelling__of__tunnelling__spectroscopy__on__III-V__semiconductors.pdf</originalFilename><uploaded>2015-05-15T13:44:26.1830000</uploaded><type>Output</type><contentLength>847380</contentLength><contentType>application/pdf</contentType><version>Accepted Manuscript</version><cronfaStatus>true</cronfaStatus><embargoDate>2015-05-15T00:00:00.0000000</embargoDate><copyrightCorrect>false</copyrightCorrect></document></documents><OutputDurs/></rfc1807>
spelling 2022-10-10T15:52:07.4508314 v2 21323 2015-05-12 Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors 2ce7e1dd9006164425415a35fa452494 0000-0003-4833-8492 Richard Cobley Richard Cobley true false 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2015-05-12 EEEG A simulation methodology to model tunnelling spectroscopy measurements based on the Price-Radcliffe formalism has been developed within a finite element device simulator. The tip-sample system is modelled self-consistently including tip-induced bending and realistic tip shapes. The resulting spectra of III–V semiconductors are compared against experimental results and a model based on the Bardeen tunnelling approach with very good agreement. We have found that the image force induced barrier lowering increases the tunnelling current by three orders of magnitude when tunnelling to the sample valence band, and by six orders of magnitude when tunnelling to the sample conduction band. The work shows that other models which use a single weighting factor to account for image force in the conduction and valence band are likely to be underestimating the valence band current by three orders of magnitude. Journal Article Applied Surface Science 295 173 179 0169-4332 Nanowires, current crowding, contacts 15 3 2014 2014-03-15 10.1016/j.apsusc.2013.12.182 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2022-10-10T15:52:07.4508314 2015-05-12T10:54:35.5593247 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering O. Kryvchenkova 1 Richard Cobley 0000-0003-4833-8492 2 Karol Kalna 0000-0002-6333-9189 3 0021323-15052015134426.pdf Self-consistent__modelling__of__tunnelling__spectroscopy__on__III-V__semiconductors.pdf 2015-05-15T13:44:26.1830000 Output 847380 application/pdf Accepted Manuscript true 2015-05-15T00:00:00.0000000 false
title Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors
spellingShingle Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors
Richard Cobley
Karol Kalna
title_short Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors
title_full Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors
title_fullStr Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors
title_full_unstemmed Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors
title_sort Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors
author_id_str_mv 2ce7e1dd9006164425415a35fa452494
1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 2ce7e1dd9006164425415a35fa452494_***_Richard Cobley
1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Richard Cobley
Karol Kalna
author2 O. Kryvchenkova
Richard Cobley
Karol Kalna
format Journal article
container_title Applied Surface Science
container_volume 295
container_start_page 173
publishDate 2014
institution Swansea University
issn 0169-4332
doi_str_mv 10.1016/j.apsusc.2013.12.182
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description A simulation methodology to model tunnelling spectroscopy measurements based on the Price-Radcliffe formalism has been developed within a finite element device simulator. The tip-sample system is modelled self-consistently including tip-induced bending and realistic tip shapes. The resulting spectra of III–V semiconductors are compared against experimental results and a model based on the Bardeen tunnelling approach with very good agreement. We have found that the image force induced barrier lowering increases the tunnelling current by three orders of magnitude when tunnelling to the sample valence band, and by six orders of magnitude when tunnelling to the sample conduction band. The work shows that other models which use a single weighting factor to account for image force in the conduction and valence band are likely to be underestimating the valence band current by three orders of magnitude.
published_date 2014-03-15T03:25:15Z
_version_ 1763750880812728320
score 11.035349

Similar Items