Journal article 975 views 227 downloads
Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors
Applied Surface Science, Volume: 295, Pages: 173 - 179
Swansea University Authors:
Richard Cobley , Karol Kalna
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DOI (Published version): 10.1016/j.apsusc.2013.12.182
Abstract
A simulation methodology to model tunnelling spectroscopy measurements based on the Price-Radcliffe formalism has been developed within a finite element device simulator. The tip-sample system is modelled self-consistently including tip-induced bending and realistic tip shapes. The resulting spectra...
Published in: | Applied Surface Science |
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ISSN: | 0169-4332 |
Published: |
2014
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URI: | https://cronfa.swan.ac.uk/Record/cronfa21323 |
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2022-10-10T15:52:07.4508314 v2 21323 2015-05-12 Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors 2ce7e1dd9006164425415a35fa452494 0000-0003-4833-8492 Richard Cobley Richard Cobley true false 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2015-05-12 EEEG A simulation methodology to model tunnelling spectroscopy measurements based on the Price-Radcliffe formalism has been developed within a finite element device simulator. The tip-sample system is modelled self-consistently including tip-induced bending and realistic tip shapes. The resulting spectra of III–V semiconductors are compared against experimental results and a model based on the Bardeen tunnelling approach with very good agreement. We have found that the image force induced barrier lowering increases the tunnelling current by three orders of magnitude when tunnelling to the sample valence band, and by six orders of magnitude when tunnelling to the sample conduction band. The work shows that other models which use a single weighting factor to account for image force in the conduction and valence band are likely to be underestimating the valence band current by three orders of magnitude. Journal Article Applied Surface Science 295 173 179 0169-4332 Nanowires, current crowding, contacts 15 3 2014 2014-03-15 10.1016/j.apsusc.2013.12.182 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2022-10-10T15:52:07.4508314 2015-05-12T10:54:35.5593247 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering O. Kryvchenkova 1 Richard Cobley 0000-0003-4833-8492 2 Karol Kalna 0000-0002-6333-9189 3 0021323-15052015134426.pdf Self-consistent__modelling__of__tunnelling__spectroscopy__on__III-V__semiconductors.pdf 2015-05-15T13:44:26.1830000 Output 847380 application/pdf Accepted Manuscript true 2015-05-15T00:00:00.0000000 false |
title |
Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors |
spellingShingle |
Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors Richard Cobley Karol Kalna |
title_short |
Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors |
title_full |
Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors |
title_fullStr |
Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors |
title_full_unstemmed |
Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors |
title_sort |
Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors |
author_id_str_mv |
2ce7e1dd9006164425415a35fa452494 1329a42020e44fdd13de2f20d5143253 |
author_id_fullname_str_mv |
2ce7e1dd9006164425415a35fa452494_***_Richard Cobley 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna |
author |
Richard Cobley Karol Kalna |
author2 |
O. Kryvchenkova Richard Cobley Karol Kalna |
format |
Journal article |
container_title |
Applied Surface Science |
container_volume |
295 |
container_start_page |
173 |
publishDate |
2014 |
institution |
Swansea University |
issn |
0169-4332 |
doi_str_mv |
10.1016/j.apsusc.2013.12.182 |
college_str |
Faculty of Science and Engineering |
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facultyofscienceandengineering |
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Faculty of Science and Engineering |
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facultyofscienceandengineering |
hierarchy_parent_title |
Faculty of Science and Engineering |
department_str |
School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering |
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active_str |
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description |
A simulation methodology to model tunnelling spectroscopy measurements based on the Price-Radcliffe formalism has been developed within a finite element device simulator. The tip-sample system is modelled self-consistently including tip-induced bending and realistic tip shapes. The resulting spectra of III–V semiconductors are compared against experimental results and a model based on the Bardeen tunnelling approach with very good agreement. We have found that the image force induced barrier lowering increases the tunnelling current by three orders of magnitude when tunnelling to the sample valence band, and by six orders of magnitude when tunnelling to the sample conduction band. The work shows that other models which use a single weighting factor to account for image force in the conduction and valence band are likely to be underestimating the valence band current by three orders of magnitude. |
published_date |
2014-03-15T03:25:15Z |
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1763750880812728320 |
score |
11.021648 |