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Anisotropic schrodinger equation quantum corrections for 3D Monte Carlo simulations of nanoscale multigate transistors / Djordje, Peric

2015 International Workshop on Computational Electronics (IWCE), Pages: 1 - 4

Swansea University Author: Djordje, Peric

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DOI (Published version): 10.1109/IWCE.2015.7301956

Abstract

We incorporated anisotropic 2D Schrodinger equation based quantum corrections (SEQC) that depends on valley orientation into a 3D Finite Element (FE) Monte Carlo (MC) simulation toolbox. The MC toolbox was tested against experimental ID-VG characteristics of the 22 nm gate length GAA Si nanowire (NW...

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Published in: 2015 International Workshop on Computational Electronics (IWCE)
Published: 2015
URI: https://cronfa.swan.ac.uk/Record/cronfa24726
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spelling 2015-11-24T20:39:58.5496952 v2 24726 2015-11-24 Anisotropic schrodinger equation quantum corrections for 3D Monte Carlo simulations of nanoscale multigate transistors 9d35cb799b2542ad39140943a9a9da65 0000-0002-1112-301X Djordje Peric Djordje Peric true false 2015-11-24 EEN We incorporated anisotropic 2D Schrodinger equation based quantum corrections (SEQC) that depends on valley orientation into a 3D Finite Element (FE) Monte Carlo (MC) simulation toolbox. The MC toolbox was tested against experimental ID-VG characteristics of the 22 nm gate length GAA Si nanowire (NW) with excellent agreement at both low and high drain biases. We then scaled the Si GAA NW according to the ITRS specifications to a gate length of 10 nm. To show the effect of anisotropic QC on the ID-VG characteristics, we simulate two 8:1 nm gate length FinFETs, rectangular-like (REC) and triangular-like (TRI), with the &#60;;100&#62; and 〈100〉 channel orientations. The QC anisotropy effect is more pronounced in the 〈100〉 channel TRI device increasing the drain current by about 13% and slightly decreasing the current by 2% in the 〈100〉 channel REC device. However, the QC anisotropy has negligible effect in any device in the 〈100〉 orientation. Conference Paper/Proceeding/Abstract 2015 International Workshop on Computational Electronics (IWCE) 1 4 1 1 2015 2015-01-01 10.1109/IWCE.2015.7301956 COLLEGE NANME Engineering COLLEGE CODE EEN Swansea University 2015-11-24T20:39:58.5496952 2015-11-24T20:15:45.1414620 College of Engineering Engineering Muhammad A. Elmessary 1 Daniel Nagy 2 Manuel Aldegunde 3 Jari Lindberg 4 Wulf Dettmer 5 Djordje Peric 0000-0002-1112-301X 6 Antonio J. Garcıa-Loureiro 7 Karol Kalna 8
title Anisotropic schrodinger equation quantum corrections for 3D Monte Carlo simulations of nanoscale multigate transistors
spellingShingle Anisotropic schrodinger equation quantum corrections for 3D Monte Carlo simulations of nanoscale multigate transistors
Djordje, Peric
title_short Anisotropic schrodinger equation quantum corrections for 3D Monte Carlo simulations of nanoscale multigate transistors
title_full Anisotropic schrodinger equation quantum corrections for 3D Monte Carlo simulations of nanoscale multigate transistors
title_fullStr Anisotropic schrodinger equation quantum corrections for 3D Monte Carlo simulations of nanoscale multigate transistors
title_full_unstemmed Anisotropic schrodinger equation quantum corrections for 3D Monte Carlo simulations of nanoscale multigate transistors
title_sort Anisotropic schrodinger equation quantum corrections for 3D Monte Carlo simulations of nanoscale multigate transistors
author_id_str_mv 9d35cb799b2542ad39140943a9a9da65
author_id_fullname_str_mv 9d35cb799b2542ad39140943a9a9da65_***_Djordje, Peric
author Djordje, Peric
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description We incorporated anisotropic 2D Schrodinger equation based quantum corrections (SEQC) that depends on valley orientation into a 3D Finite Element (FE) Monte Carlo (MC) simulation toolbox. The MC toolbox was tested against experimental ID-VG characteristics of the 22 nm gate length GAA Si nanowire (NW) with excellent agreement at both low and high drain biases. We then scaled the Si GAA NW according to the ITRS specifications to a gate length of 10 nm. To show the effect of anisotropic QC on the ID-VG characteristics, we simulate two 8:1 nm gate length FinFETs, rectangular-like (REC) and triangular-like (TRI), with the &#60;;100&#62; and 〈100〉 channel orientations. The QC anisotropy effect is more pronounced in the 〈100〉 channel TRI device increasing the drain current by about 13% and slightly decreasing the current by 2% in the 〈100〉 channel REC device. However, the QC anisotropy has negligible effect in any device in the 〈100〉 orientation.
published_date 2015-01-01T18:38:45Z
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score 10.873312