No Cover Image

Journal article 842 views 124 downloads

Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge

Hongfei Li, Yuzheng Guo Orcid Logo, John Robertson

Scientific Reports, Volume: 7, Issue: 1

Swansea University Author: Yuzheng Guo Orcid Logo

Check full text

DOI (Published version): 10.1038/s41598-017-16803-6

Abstract

Density functional supercell calculations of the Schottky barrier heights (SBH) of metal germanides and silicides on Si or Ge find that these vary with the facet, unlike those of elemental metals. In addition, silicides and germanides show a stronger dependence of their SBHs on the work function tha...

Full description

Published in: Scientific Reports
ISSN: 2045-2322
Published: 2017
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa37780
Tags: Add Tag
No Tags, Be the first to tag this record!
first_indexed 2018-01-02T14:08:08Z
last_indexed 2018-02-27T19:46:23Z
id cronfa37780
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2018-02-27T14:10:05.1264356</datestamp><bib-version>v2</bib-version><id>37780</id><entry>2018-01-02</entry><title>Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge</title><swanseaauthors><author><sid>2c285ab01f88f7ecb25a3aacabee52ea</sid><ORCID>0000-0003-2656-0340</ORCID><firstname>Yuzheng</firstname><surname>Guo</surname><name>Yuzheng Guo</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2018-01-02</date><deptcode>GENG</deptcode><abstract>Density functional supercell calculations of the Schottky barrier heights (SBH) of metal germanides and silicides on Si or Ge find that these vary with the facet, unlike those of elemental metals. In addition, silicides and germanides show a stronger dependence of their SBHs on the work function than those of elemental metals, as seen experimentally. Both effects are beyond the standard metal induced gap states model. NiSi2 is found to have a much lower SBH on n-Si(100) than on n-Si(111), as seen experimentally. It is shown how such results can be used to design lower SBH contacts for n-Ge, which are needed technologically. The SBHs of the better behaved Si/silicide interfaces can be used to benchmark the behavior of the less well behaved Ge-germanide interfaces for this purpose. The dependence of the SBH of epitaxial Pb-Si(111) on its reconstruction is also covered.</abstract><type>Journal Article</type><journal>Scientific Reports</journal><volume>7</volume><journalNumber>1</journalNumber><publisher/><issnElectronic>2045-2322</issnElectronic><keywords>Electrical and electronic engineering, Electronic devices</keywords><publishedDay>30</publishedDay><publishedMonth>11</publishedMonth><publishedYear>2017</publishedYear><publishedDate>2017-11-30</publishedDate><doi>10.1038/s41598-017-16803-6</doi><url/><notes/><college>COLLEGE NANME</college><department>General Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>GENG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2018-02-27T14:10:05.1264356</lastEdited><Created>2018-01-02T10:51:09.2467180</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering</level></path><authors><author><firstname>Hongfei</firstname><surname>Li</surname><order>1</order></author><author><firstname>Yuzheng</firstname><surname>Guo</surname><orcid>0000-0003-2656-0340</orcid><order>2</order></author><author><firstname>John</firstname><surname>Robertson</surname><order>3</order></author></authors><documents><document><filename>0037780-02012018105305.pdf</filename><originalFilename>li2017.pdf</originalFilename><uploaded>2018-01-02T10:53:05.0800000</uploaded><type>Output</type><contentLength>2828749</contentLength><contentType>application/pdf</contentType><version>Version of Record</version><cronfaStatus>true</cronfaStatus><embargoDate>2018-01-02T00:00:00.0000000</embargoDate><copyrightCorrect>true</copyrightCorrect><language>eng</language></document></documents><OutputDurs/></rfc1807>
spelling 2018-02-27T14:10:05.1264356 v2 37780 2018-01-02 Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge 2c285ab01f88f7ecb25a3aacabee52ea 0000-0003-2656-0340 Yuzheng Guo Yuzheng Guo true false 2018-01-02 GENG Density functional supercell calculations of the Schottky barrier heights (SBH) of metal germanides and silicides on Si or Ge find that these vary with the facet, unlike those of elemental metals. In addition, silicides and germanides show a stronger dependence of their SBHs on the work function than those of elemental metals, as seen experimentally. Both effects are beyond the standard metal induced gap states model. NiSi2 is found to have a much lower SBH on n-Si(100) than on n-Si(111), as seen experimentally. It is shown how such results can be used to design lower SBH contacts for n-Ge, which are needed technologically. The SBHs of the better behaved Si/silicide interfaces can be used to benchmark the behavior of the less well behaved Ge-germanide interfaces for this purpose. The dependence of the SBH of epitaxial Pb-Si(111) on its reconstruction is also covered. Journal Article Scientific Reports 7 1 2045-2322 Electrical and electronic engineering, Electronic devices 30 11 2017 2017-11-30 10.1038/s41598-017-16803-6 COLLEGE NANME General Engineering COLLEGE CODE GENG Swansea University 2018-02-27T14:10:05.1264356 2018-01-02T10:51:09.2467180 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering Hongfei Li 1 Yuzheng Guo 0000-0003-2656-0340 2 John Robertson 3 0037780-02012018105305.pdf li2017.pdf 2018-01-02T10:53:05.0800000 Output 2828749 application/pdf Version of Record true 2018-01-02T00:00:00.0000000 true eng
title Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge
spellingShingle Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge
Yuzheng Guo
title_short Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge
title_full Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge
title_fullStr Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge
title_full_unstemmed Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge
title_sort Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge
author_id_str_mv 2c285ab01f88f7ecb25a3aacabee52ea
author_id_fullname_str_mv 2c285ab01f88f7ecb25a3aacabee52ea_***_Yuzheng Guo
author Yuzheng Guo
author2 Hongfei Li
Yuzheng Guo
John Robertson
format Journal article
container_title Scientific Reports
container_volume 7
container_issue 1
publishDate 2017
institution Swansea University
issn 2045-2322
doi_str_mv 10.1038/s41598-017-16803-6
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering
document_store_str 1
active_str 0
description Density functional supercell calculations of the Schottky barrier heights (SBH) of metal germanides and silicides on Si or Ge find that these vary with the facet, unlike those of elemental metals. In addition, silicides and germanides show a stronger dependence of their SBHs on the work function than those of elemental metals, as seen experimentally. Both effects are beyond the standard metal induced gap states model. NiSi2 is found to have a much lower SBH on n-Si(100) than on n-Si(111), as seen experimentally. It is shown how such results can be used to design lower SBH contacts for n-Ge, which are needed technologically. The SBHs of the better behaved Si/silicide interfaces can be used to benchmark the behavior of the less well behaved Ge-germanide interfaces for this purpose. The dependence of the SBH of epitaxial Pb-Si(111) on its reconstruction is also covered.
published_date 2017-11-30T03:47:38Z
_version_ 1763752288946487296
score 11.012678

Similar Items