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Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs

Steven J. Duffy, Brahim Benbakhti, Karol Kalna Orcid Logo, Mohammed Boucherta, Wei D. Zhang, Nour E. Bourzgui, Ali Soltani

IEEE Access, Volume: 6, Pages: 42721 - 42728

Swansea University Author: Karol Kalna Orcid Logo

Abstract

Operating temperature distributions in AlGaN/GaN gateless and gated devices are characterized and analyzed using the InfraScope temperature mapping system. For the first time, a substantial rise of channel temperature at the inner ends of ohmic contacts has been observed. Synchrotron radiation-based...

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Published in: IEEE Access
ISSN: 2169-3536
Published: Institute of Electrical and Electronics Engineers (IEEE) 2018
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URI: https://cronfa.swan.ac.uk/Record/cronfa43367
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spelling 2020-10-16T13:22:59.3485360 v2 43367 2018-08-14 Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2018-08-14 EEEG Operating temperature distributions in AlGaN/GaN gateless and gated devices are characterized and analyzed using the InfraScope temperature mapping system. For the first time, a substantial rise of channel temperature at the inner ends of ohmic contacts has been observed. Synchrotron radiation-based high-resolution X-ray diffraction technique combined with drift–diffusion simulations show that strain reduction at the vicinity of ohmic contacts increases electric field at these locations, resulting in the rise of lattice temperature. The thermal coupling of a high conductive tensile region at the contacts to a low conductive channel region is an origin of the temperature rise observed in both short- and long-channel gateless devices. Journal Article IEEE Access 6 42721 42728 Institute of Electrical and Electronics Engineers (IEEE) 2169-3536 20 8 2018 2018-08-20 10.1109/access.2018.2861323 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2020-10-16T13:22:59.3485360 2018-08-14T15:18:32.6363996 College of Engineering Engineering Steven J. Duffy 1 Brahim Benbakhti 2 Karol Kalna 0000-0002-6333-9189 3 Mohammed Boucherta 4 Wei D. Zhang 5 Nour E. Bourzgui 6 Ali Soltani 7 0043367-03092018120831.pdf duffy2018(2).pdf 2018-09-03T12:08:31.2270000 Output 10006522 application/pdf Version of Record true 2018-09-03T00:00:00.0000000 false eng
title Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs
spellingShingle Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs
Karol Kalna
title_short Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs
title_full Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs
title_fullStr Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs
title_full_unstemmed Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs
title_sort Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 Steven J. Duffy
Brahim Benbakhti
Karol Kalna
Mohammed Boucherta
Wei D. Zhang
Nour E. Bourzgui
Ali Soltani
format Journal article
container_title IEEE Access
container_volume 6
container_start_page 42721
publishDate 2018
institution Swansea University
issn 2169-3536
doi_str_mv 10.1109/access.2018.2861323
publisher Institute of Electrical and Electronics Engineers (IEEE)
college_str College of Engineering
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hierarchy_top_id collegeofengineering
hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
document_store_str 1
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description Operating temperature distributions in AlGaN/GaN gateless and gated devices are characterized and analyzed using the InfraScope temperature mapping system. For the first time, a substantial rise of channel temperature at the inner ends of ohmic contacts has been observed. Synchrotron radiation-based high-resolution X-ray diffraction technique combined with drift–diffusion simulations show that strain reduction at the vicinity of ohmic contacts increases electric field at these locations, resulting in the rise of lattice temperature. The thermal coupling of a high conductive tensile region at the contacts to a low conductive channel region is an origin of the temperature rise observed in both short- and long-channel gateless devices.
published_date 2018-08-20T03:57:29Z
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score 10.897771