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The effects of vacuum annealing on the conduction characteristics of ZnO nanorods

Chris J. Barnett, Vasileios Mourgelas, James McGettrick Orcid Logo, Thierry Maffeis Orcid Logo, Andrew Barron Orcid Logo, Richard Cobley Orcid Logo

Materials Letters, Volume: 243, Pages: 144 - 147

Swansea University Authors: James McGettrick Orcid Logo, Thierry Maffeis Orcid Logo, Andrew Barron Orcid Logo, Richard Cobley Orcid Logo

Abstract

Optimised ZnO nanorods characteristics are essential for novel devices to operate efficiently. The effects of vacuum annealing on the electrical transport properties and defect chemistry of ZnO nanorods have been studied. Annealing to 500 °C removed surface contamination causing reduced resistance w...

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Published in: Materials Letters
ISSN: 0167-577X
Published: 2019
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa48830
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Abstract: Optimised ZnO nanorods characteristics are essential for novel devices to operate efficiently. The effects of vacuum annealing on the electrical transport properties and defect chemistry of ZnO nanorods have been studied. Annealing to 500 °C removed surface contamination causing reduced resistance while annealing to 600 °C created acceptor defects, changing the contact type from ohmic to rectifying. At 700 °C donor defects reduced leading to increased resistance while annealing to 800 °C caused a reduction in all defects and decreased resistance. This suggests that contact resistance is the major contributor to the system’s resistance rather than the inherent material resistance alone. The results indicate that contact type can be controlled by manipulating the defect chemistry via controlled annealing.
Keywords: ZnO, Nanorods, Annealing, Photoluminescence, Conduction
Start Page: 144
End Page: 147