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The effects of vacuum annealing on the conduction characteristics of ZnO nanorods

Chris J. Barnett, Vasileios Mourgelas, James McGettrick Orcid Logo, Thierry Maffeis Orcid Logo, Andrew Barron Orcid Logo, Richard Cobley Orcid Logo

Materials Letters, Volume: 243, Pages: 144 - 147

Swansea University Authors: James McGettrick Orcid Logo, Thierry Maffeis Orcid Logo, Andrew Barron Orcid Logo, Richard Cobley Orcid Logo

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DOI (Published version): 10.1016/j.matlet.2019.02.005

Abstract

Optimised ZnO nanorods characteristics are essential for novel devices to operate efficiently. The effects of vacuum annealing on the electrical transport properties and defect chemistry of ZnO nanorods have been studied. Annealing to 500 °C removed surface contamination causing reduced resistance w...

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Published in: Materials Letters
ISSN: 0167-577X
Published: 2019
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URI: https://cronfa.swan.ac.uk/Record/cronfa48830
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first_indexed 2019-02-14T14:04:43Z
last_indexed 2019-03-27T11:20:16Z
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spelling 2019-03-26T14:10:23.3709730 v2 48830 2019-02-14 The effects of vacuum annealing on the conduction characteristics of ZnO nanorods bdbacc591e2de05180e0fd3cc13fa480 0000-0002-7719-2958 James McGettrick James McGettrick true false 992eb4cb18b61c0cd3da6e0215ac787c 0000-0003-2357-0092 Thierry Maffeis Thierry Maffeis true false 92e452f20936d688d36f91c78574241d 0000-0002-2018-8288 Andrew Barron Andrew Barron true false 2ce7e1dd9006164425415a35fa452494 0000-0003-4833-8492 Richard Cobley Richard Cobley true false 2019-02-14 MTLS Optimised ZnO nanorods characteristics are essential for novel devices to operate efficiently. The effects of vacuum annealing on the electrical transport properties and defect chemistry of ZnO nanorods have been studied. Annealing to 500 °C removed surface contamination causing reduced resistance while annealing to 600 °C created acceptor defects, changing the contact type from ohmic to rectifying. At 700 °C donor defects reduced leading to increased resistance while annealing to 800 °C caused a reduction in all defects and decreased resistance. This suggests that contact resistance is the major contributor to the system’s resistance rather than the inherent material resistance alone. The results indicate that contact type can be controlled by manipulating the defect chemistry via controlled annealing. Journal Article Materials Letters 243 144 147 0167-577X ZnO, Nanorods, Annealing, Photoluminescence, Conduction 31 12 2019 2019-12-31 10.1016/j.matlet.2019.02.005 COLLEGE NANME Materials Science and Engineering COLLEGE CODE MTLS Swansea University 2019-03-26T14:10:23.3709730 2019-02-14T09:52:11.2886875 Chris J. Barnett 1 Vasileios Mourgelas 2 James McGettrick 0000-0002-7719-2958 3 Thierry Maffeis 0000-0003-2357-0092 4 Andrew Barron 0000-0002-2018-8288 5 Richard Cobley 0000-0003-4833-8492 6 0048830-14022019095357.pdf barnett2019.pdf 2019-02-14T09:53:57.3030000 Output 2891448 application/pdf Accepted Manuscript true 2020-02-10T00:00:00.0000000 true eng
title The effects of vacuum annealing on the conduction characteristics of ZnO nanorods
spellingShingle The effects of vacuum annealing on the conduction characteristics of ZnO nanorods
James McGettrick
Thierry Maffeis
Andrew Barron
Richard Cobley
title_short The effects of vacuum annealing on the conduction characteristics of ZnO nanorods
title_full The effects of vacuum annealing on the conduction characteristics of ZnO nanorods
title_fullStr The effects of vacuum annealing on the conduction characteristics of ZnO nanorods
title_full_unstemmed The effects of vacuum annealing on the conduction characteristics of ZnO nanorods
title_sort The effects of vacuum annealing on the conduction characteristics of ZnO nanorods
author_id_str_mv bdbacc591e2de05180e0fd3cc13fa480
992eb4cb18b61c0cd3da6e0215ac787c
92e452f20936d688d36f91c78574241d
2ce7e1dd9006164425415a35fa452494
author_id_fullname_str_mv bdbacc591e2de05180e0fd3cc13fa480_***_James McGettrick
992eb4cb18b61c0cd3da6e0215ac787c_***_Thierry Maffeis
92e452f20936d688d36f91c78574241d_***_Andrew Barron
2ce7e1dd9006164425415a35fa452494_***_Richard Cobley
author James McGettrick
Thierry Maffeis
Andrew Barron
Richard Cobley
author2 Chris J. Barnett
Vasileios Mourgelas
James McGettrick
Thierry Maffeis
Andrew Barron
Richard Cobley
format Journal article
container_title Materials Letters
container_volume 243
container_start_page 144
publishDate 2019
institution Swansea University
issn 0167-577X
doi_str_mv 10.1016/j.matlet.2019.02.005
document_store_str 1
active_str 0
description Optimised ZnO nanorods characteristics are essential for novel devices to operate efficiently. The effects of vacuum annealing on the electrical transport properties and defect chemistry of ZnO nanorods have been studied. Annealing to 500 °C removed surface contamination causing reduced resistance while annealing to 600 °C created acceptor defects, changing the contact type from ohmic to rectifying. At 700 °C donor defects reduced leading to increased resistance while annealing to 800 °C caused a reduction in all defects and decreased resistance. This suggests that contact resistance is the major contributor to the system’s resistance rather than the inherent material resistance alone. The results indicate that contact type can be controlled by manipulating the defect chemistry via controlled annealing.
published_date 2019-12-31T03:59:30Z
_version_ 1763753035444518912
score 11.012678

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