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Recent Advances in Graphene Homogeneous p–n Junction for Optoelectronics

Pin Tian, Libin Tang, Kar Seng Teng, Jinzhong Xiang, Shu Ping Lau, Vincent Teng Orcid Logo

Advanced Materials Technologies, Start page: 1900007

Swansea University Author: Vincent Teng Orcid Logo

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DOI (Published version): 10.1002/admt.201900007

Abstract

Graphene has been widely used as electrodes and active layers in optoelectronics due to its diverse excellent performances, such as high mobility, large thermal conductivity, and high specific surface area. Methodology for constructing p–n junction has become an important consideration in improving...

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Published in: Advanced Materials Technologies
ISSN: 2365-709X 2365-709X
Published: 2019
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URI: https://cronfa.swan.ac.uk/Record/cronfa49145
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first_indexed 2019-03-07T14:05:16Z
last_indexed 2019-05-14T13:56:36Z
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spelling 2019-05-13T13:54:33.4336204 v2 49145 2019-03-07 Recent Advances in Graphene Homogeneous p–n Junction for Optoelectronics 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2019-03-07 EEEG Graphene has been widely used as electrodes and active layers in optoelectronics due to its diverse excellent performances, such as high mobility, large thermal conductivity, and high specific surface area. Methodology for constructing p–n junction has become an important consideration in improving the performance of optoelectronic devices and broadening of its application in related fields. Currently, graphene‐based p–n junctions have been explored and different structures have also been investigated. Herein, the recent progress on graphene homogeneous p–n junction is summarized, ranging from preparation of front‐end materials (e.g., p‐ and n‐type graphene) to building of planar and vertical p–n junctions. Furthermore, p–n junction via electrical modulation is described. The requirements for building the graphene homogeneous p–n junction, and the advantages and drawbacks of the different structures of the p–n junction are also discussed. Finally, a preferential technique to fabricate high performance p‐ and n‐type graphene and building of the p–n junction is evaluated. This paper therefore provides an important indication on the future direction on the application of graphene in optoelectronics. Journal Article Advanced Materials Technologies 1900007 2365-709X 2365-709X 31 12 2019 2019-12-31 10.1002/admt.201900007 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2019-05-13T13:54:33.4336204 2019-03-07T11:00:40.6271258 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Pin Tian 1 Libin Tang 2 Kar Seng Teng 3 Jinzhong Xiang 4 Shu Ping Lau 5 Vincent Teng 0000-0003-4325-8573 6 0049145-07032019110307.pdf tian2019.pdf 2019-03-07T11:03:07.4970000 Output 4187767 application/pdf Accepted Manuscript true 2020-04-12T00:00:00.0000000 false eng
title Recent Advances in Graphene Homogeneous p–n Junction for Optoelectronics
spellingShingle Recent Advances in Graphene Homogeneous p–n Junction for Optoelectronics
Vincent Teng
title_short Recent Advances in Graphene Homogeneous p–n Junction for Optoelectronics
title_full Recent Advances in Graphene Homogeneous p–n Junction for Optoelectronics
title_fullStr Recent Advances in Graphene Homogeneous p–n Junction for Optoelectronics
title_full_unstemmed Recent Advances in Graphene Homogeneous p–n Junction for Optoelectronics
title_sort Recent Advances in Graphene Homogeneous p–n Junction for Optoelectronics
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author Vincent Teng
author2 Pin Tian
Libin Tang
Kar Seng Teng
Jinzhong Xiang
Shu Ping Lau
Vincent Teng
format Journal article
container_title Advanced Materials Technologies
container_start_page 1900007
publishDate 2019
institution Swansea University
issn 2365-709X
2365-709X
doi_str_mv 10.1002/admt.201900007
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Graphene has been widely used as electrodes and active layers in optoelectronics due to its diverse excellent performances, such as high mobility, large thermal conductivity, and high specific surface area. Methodology for constructing p–n junction has become an important consideration in improving the performance of optoelectronic devices and broadening of its application in related fields. Currently, graphene‐based p–n junctions have been explored and different structures have also been investigated. Herein, the recent progress on graphene homogeneous p–n junction is summarized, ranging from preparation of front‐end materials (e.g., p‐ and n‐type graphene) to building of planar and vertical p–n junctions. Furthermore, p–n junction via electrical modulation is described. The requirements for building the graphene homogeneous p–n junction, and the advantages and drawbacks of the different structures of the p–n junction are also discussed. Finally, a preferential technique to fabricate high performance p‐ and n‐type graphene and building of the p–n junction is evaluated. This paper therefore provides an important indication on the future direction on the application of graphene in optoelectronics.
published_date 2019-12-31T03:59:56Z
_version_ 1763753062599491584
score 10.998116

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