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P-type β-gallium oxide: A new perspective for power and optoelectronic devices / Ekaterine Chikoidze, Adel Fellous, Amador Perez-Tomas, Guillaume Sauthier, Tamar Tchelidze, Cuong Ton-That, Tung Thanh Huynh, Matthew Phillips, Stephen Russell, Mike Jennings, Bruno Berini, Francois Jomard, Yves Dumont

Materials Today Physics, Volume: 3, Pages: 118 - 126

Swansea University Author: Mike Jennings

Abstract

Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga2O3. Hole conduction, established by Hall and Seebeck measurements, is consistent wi...

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Published in: Materials Today Physics
ISSN: 2542-5293
Published: 2017
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa49904
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Abstract: Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga2O3. Hole conduction, established by Hall and Seebeck measurements, is consistent with findings from photoemission and cathodoluminescence spectroscopies. The ionization energy of the acceptor level was measured to be 1.1eV above the valence band edge. The gallium vacancy was identified as a possible acceptor candidate based on thermodynamic equilibrium Ga2O3 (crystal) – O2 (gas) system calculations (Kroger theory) which revealed a window without oxygen vacancy compensation. The possibility of fabricating large diameter wafers of β-Ga2O3 of p and n type nature, provides new avenues for high power and deep UV-optoelectronic devices.
Keywords: Wide band gap semiconductor; Beta-Ga2O3; Electrical properties; Hole conductivity; Thermodynamic calculations
College: College of Engineering
Start Page: 118
End Page: 126