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P-type β-gallium oxide: A new perspective for power and optoelectronic devices

Ekaterine Chikoidze, Adel Fellous, Amador Perez-Tomas, Guillaume Sauthier, Tamar Tchelidze, Cuong Ton-That, Tung Thanh Huynh, Matthew Phillips, Stephen Russell, Mike Jennings Orcid Logo, Bruno Berini, Francois Jomard, Yves Dumont

Materials Today Physics, Volume: 3, Pages: 118 - 126

Swansea University Author: Mike Jennings Orcid Logo

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DOI (Published version): 10.1016/j.mtphys.2017.10.002

Abstract

Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga2O3. Hole conduction, established by Hall and Seebeck measurements, is consistent wi...

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Published in: Materials Today Physics
ISSN: 2542-5293
Published: 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa49904
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spelling 2020-11-02T09:19:47.3375276 v2 49904 2019-04-05 P-type β-gallium oxide: A new perspective for power and optoelectronic devices e0ba5d7ece08cd70c9f8f8683996454a 0000-0003-3270-0805 Mike Jennings Mike Jennings true false 2019-04-05 EEEG Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga2O3. Hole conduction, established by Hall and Seebeck measurements, is consistent with findings from photoemission and cathodoluminescence spectroscopies. The ionization energy of the acceptor level was measured to be 1.1eV above the valence band edge. The gallium vacancy was identified as a possible acceptor candidate based on thermodynamic equilibrium Ga2O3 (crystal) – O2 (gas) system calculations (Kroger theory) which revealed a window without oxygen vacancy compensation. The possibility of fabricating large diameter wafers of β-Ga2O3 of p and n type nature, provides new avenues for high power and deep UV-optoelectronic devices. Journal Article Materials Today Physics 3 118 126 2542-5293 Wide band gap semiconductor; Beta-Ga2O3; Electrical properties; Hole conductivity; Thermodynamic calculations 31 12 2017 2017-12-31 10.1016/j.mtphys.2017.10.002 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2020-11-02T09:19:47.3375276 2019-04-05T09:42:29.5179477 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Ekaterine Chikoidze 1 Adel Fellous 2 Amador Perez-Tomas 3 Guillaume Sauthier 4 Tamar Tchelidze 5 Cuong Ton-That 6 Tung Thanh Huynh 7 Matthew Phillips 8 Stephen Russell 9 Mike Jennings 0000-0003-3270-0805 10 Bruno Berini 11 Francois Jomard 12 Yves Dumont 13 0049904-05042019094649.pdf chikoidze2017.pdf 2019-04-05T09:46:49.7270000 Output 7693583 application/pdf Accepted Manuscript true 2019-04-05T00:00:00.0000000 true eng
title P-type β-gallium oxide: A new perspective for power and optoelectronic devices
spellingShingle P-type β-gallium oxide: A new perspective for power and optoelectronic devices
Mike Jennings
title_short P-type β-gallium oxide: A new perspective for power and optoelectronic devices
title_full P-type β-gallium oxide: A new perspective for power and optoelectronic devices
title_fullStr P-type β-gallium oxide: A new perspective for power and optoelectronic devices
title_full_unstemmed P-type β-gallium oxide: A new perspective for power and optoelectronic devices
title_sort P-type β-gallium oxide: A new perspective for power and optoelectronic devices
author_id_str_mv e0ba5d7ece08cd70c9f8f8683996454a
author_id_fullname_str_mv e0ba5d7ece08cd70c9f8f8683996454a_***_Mike Jennings
author Mike Jennings
author2 Ekaterine Chikoidze
Adel Fellous
Amador Perez-Tomas
Guillaume Sauthier
Tamar Tchelidze
Cuong Ton-That
Tung Thanh Huynh
Matthew Phillips
Stephen Russell
Mike Jennings
Bruno Berini
Francois Jomard
Yves Dumont
format Journal article
container_title Materials Today Physics
container_volume 3
container_start_page 118
publishDate 2017
institution Swansea University
issn 2542-5293
doi_str_mv 10.1016/j.mtphys.2017.10.002
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga2O3. Hole conduction, established by Hall and Seebeck measurements, is consistent with findings from photoemission and cathodoluminescence spectroscopies. The ionization energy of the acceptor level was measured to be 1.1eV above the valence band edge. The gallium vacancy was identified as a possible acceptor candidate based on thermodynamic equilibrium Ga2O3 (crystal) – O2 (gas) system calculations (Kroger theory) which revealed a window without oxygen vacancy compensation. The possibility of fabricating large diameter wafers of β-Ga2O3 of p and n type nature, provides new avenues for high power and deep UV-optoelectronic devices.
published_date 2017-12-31T04:01:10Z
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score 11.017797

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