Electrochemically copper-doped bismuth tellurium selenide thin films

Burton, Matthew; Naylor, Andrew J.; Nandhakumar, Iris S.

doi:10.1016/j.elecom.2018.10.006

Journal article 582 views 102 downloads

Electrochemically copper-doped bismuth tellurium selenide thin films

Matthew Burton

, Andrew J. Naylor, Iris S. Nandhakumar

Electrochemistry Communications, Volume: 97, Pages: 56 - 59

Swansea University Author: Matthew Burton

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DOI (Published version): 10.1016/j.elecom.2018.10.006

Abstract

We report the first results of a study on electrochemically doped copper bismuth tellurium selenide thin films electrodeposited from aqueous nitric acid electrolytes containing up to 2 mM of Cu(NO3)2. The effect of Cu(NO3)2 concentration on the composition, structure and thermoelectric properties of...

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Published in:	Electrochemistry Communications
ISSN:	1388-2481
Published:	Elsevier BV 2018
Online Access:	Check full text
URI:	https://cronfa.swan.ac.uk/Record/cronfa50234
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last_indexed	2019-05-13T13:49:20Z
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spelling	2019-05-10T15:11:54.8687711 v2 50234 2019-05-07 Electrochemically copper-doped bismuth tellurium selenide thin films 2deade2806e39b1f749e9cf67ac640b2 0000-0002-0376-6322 Matthew Burton Matthew Burton true false 2019-05-07 MTLS We report the first results of a study on electrochemically doped copper bismuth tellurium selenide thin films electrodeposited from aqueous nitric acid electrolytes containing up to 2 mM of Cu(NO3)2. The effect of Cu(NO3)2 concentration on the composition, structure and thermoelectric properties of the bismuth tellurium selenide films is investigated by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction and Seebeck and Hall effect measurements. A Cu(NO3)2 concentration of 1.5 mM is found to offer a Seebeck coefficient of up to −390 μV K−1 at room temperature, which is the highest reported to date for an electrodeposited bismuth tellurium compound. Journal Article Electrochemistry Communications 97 56 59 Elsevier BV 1388-2481 Bismuth tellurium selenide, Electrodeposition, Thin films, Copper doping, Thermoelectrics 31 12 2018 2018-12-31 10.1016/j.elecom.2018.10.006 COLLEGE NANME Materials Science and Engineering COLLEGE CODE MTLS Swansea University 2019-05-10T15:11:54.8687711 2019-05-07T09:56:46.6122752 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering Matthew Burton 0000-0002-0376-6322 1 Andrew J. Naylor 2 Iris S. Nandhakumar 3 50234__16387__a768276b732a4e969aa39084cf7bc8c6.pdf 50234.pdf 2020-01-22T11:40:09.3543510 Output 944025 application/pdf Version of Record true Released under the terms of a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International license (CC-BY-NC-ND). true eng https://creativecommons.org/licenses/by-nc-nd/4.0/
title	Electrochemically copper-doped bismuth tellurium selenide thin films
spellingShingle	Electrochemically copper-doped bismuth tellurium selenide thin films Matthew Burton
title_short	Electrochemically copper-doped bismuth tellurium selenide thin films
title_full	Electrochemically copper-doped bismuth tellurium selenide thin films
title_fullStr	Electrochemically copper-doped bismuth tellurium selenide thin films
title_full_unstemmed	Electrochemically copper-doped bismuth tellurium selenide thin films
title_sort	Electrochemically copper-doped bismuth tellurium selenide thin films
author_id_str_mv	2deade2806e39b1f749e9cf67ac640b2
author_id_fullname_str_mv	2deade2806e39b1f749e9cf67ac640b2_***_Matthew Burton
author	Matthew Burton
author2	Matthew Burton Andrew J. Naylor Iris S. Nandhakumar
format	Journal article
container_title	Electrochemistry Communications
container_volume	97
container_start_page	56
publishDate	2018
institution	Swansea University
issn	1388-2481
doi_str_mv	10.1016/j.elecom.2018.10.006
publisher	Elsevier BV
college_str	Faculty of Science and Engineering
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hierarchy_top_id	facultyofscienceandengineering
hierarchy_top_title	Faculty of Science and Engineering
hierarchy_parent_id	facultyofscienceandengineering
hierarchy_parent_title	Faculty of Science and Engineering
department_str	School of Engineering and Applied Sciences - Materials Science and Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Materials Science and Engineering
document_store_str	1
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description	We report the first results of a study on electrochemically doped copper bismuth tellurium selenide thin films electrodeposited from aqueous nitric acid electrolytes containing up to 2 mM of Cu(NO3)2. The effect of Cu(NO3)2 concentration on the composition, structure and thermoelectric properties of the bismuth tellurium selenide films is investigated by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction and Seebeck and Hall effect measurements. A Cu(NO3)2 concentration of 1.5 mM is found to offer a Seebeck coefficient of up to −390 μV K−1 at room temperature, which is the highest reported to date for an electrodeposited bismuth tellurium compound.
published_date	2018-12-31T04:01:36Z
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score	10.997866

Electrochemically copper-doped bismuth tellurium selenide thin films

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