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Electrochemical Formation of p-Type Bi0.5Sb1.5Te3Thick Films onto Nickel
Journal of The Electrochemical Society, Volume: 164, Issue: 4, Pages: D192 - D195
Swansea University Author:
Matthew Burton
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DOI (Published version): 10.1149/2.1151704jes
Abstract
Bismuth-telluride-based alloys are currently the best commercially available thermoelectric materials for applications at room temperatures. Up to 150 micron thick layers of bismuth antimony telluride (Bi0.5Sb1.5Te3) were directly deposited onto nickel by either potenstiostatic or potentiodynamic el...
| Published in: | Journal of The Electrochemical Society |
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| ISSN: | 0013-4651 1945-7111 |
| Published: |
2017
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa50239 |
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| Abstract: |
Bismuth-telluride-based alloys are currently the best commercially available thermoelectric materials for applications at room temperatures. Up to 150 micron thick layers of bismuth antimony telluride (Bi0.5Sb1.5Te3) were directly deposited onto nickel by either potenstiostatic or potentiodynamic electrodeposition. Cyclic voltammetry was employed to identify the optimal deposition potential. The films were characterized by scanning electron microscopy, energy dispersive X-rays and X-ray diffraction. The p-type films were found to be well adherent, uniform and stoichiometric with a high power factor of 2.3 × 10−4 W m−1 K−2 at film growth rates of up to 40 μm h−1. |
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| Keywords: |
bismuth antimony telluride, electrodeposition, nickel, p-type, thermoelectrics, thick films |
| College: |
Faculty of Science and Engineering |
| Issue: |
4 |
| Start Page: |
D192 |
| End Page: |
D195 |