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Electrochemical deposition of bismuth telluride thick layers onto nickel

C. Lei, K.S. Ryder, E. Koukharenko, M. Burton, Iris S. Nandhakumar, Matthew Burton Orcid Logo

Electrochemistry Communications, Volume: 66, Pages: 1 - 4

Swansea University Author: Matthew Burton Orcid Logo

Abstract

Bismuth telluride (Bi2Te3) is the currently best performing thermoelectric (TE) material in commercial TE devices for refrigeration and waste heat recovery up to 200 °C. Up to 800 μm thick, compact, uniform and stoichiometric Bi2Te3 films were synthesized by pulsed electrodeposition from 2 M nitric...

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Published in: Electrochemistry Communications
ISSN: 1388-2481
Published: 2016
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URI: https://cronfa.swan.ac.uk/Record/cronfa50241
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spelling 2019-06-05T09:50:15.6391140 v2 50241 2019-05-07 Electrochemical deposition of bismuth telluride thick layers onto nickel 2deade2806e39b1f749e9cf67ac640b2 0000-0002-0376-6322 Matthew Burton Matthew Burton true false 2019-05-07 MTLS Bismuth telluride (Bi2Te3) is the currently best performing thermoelectric (TE) material in commercial TE devices for refrigeration and waste heat recovery up to 200 °C. Up to 800 μm thick, compact, uniform and stoichiometric Bi2Te3 films were synthesized by pulsed electrodeposition from 2 M nitric acid baths containing bismuth and tellurium dioxide on 1 cm2 nickel (Ni) substrates at average film growth rates of ~ 50 μm/h. Pre-treatment of the Ni substrate was found to significantly enhance the adhesion of Bi2Te3 material onto Ni while pulsed electrodeposition was used to increase the compactness of the material. To maintain a homogeneous composition across the thickness of the films, a sacrificial Bi2Te3 anode was employed. All deposits produced were n-type with a Seebeck coefficient of up to − 80 μV/K and an electrical conductivity of ~ 330 S/cm at room temperature. Journal Article Electrochemistry Communications 66 1 4 1388-2481 31 5 2016 2016-05-31 10.1016/j.elecom.2016.02.005 COLLEGE NANME Materials Science and Engineering COLLEGE CODE MTLS Swansea University 2019-06-05T09:50:15.6391140 2019-05-07T09:57:06.4780918 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering C. Lei 1 K.S. Ryder 2 E. Koukharenko 3 M. Burton 4 Iris S. Nandhakumar 5 Matthew Burton 0000-0002-0376-6322 6 0050241-05062019094952.pdf BiTe_electrochem.pdf 2019-06-05T09:49:52.8770000 Output 751961 application/pdf Accepted Manuscript true 2019-06-05T00:00:00.0000000 false eng
title Electrochemical deposition of bismuth telluride thick layers onto nickel
spellingShingle Electrochemical deposition of bismuth telluride thick layers onto nickel
Matthew Burton
title_short Electrochemical deposition of bismuth telluride thick layers onto nickel
title_full Electrochemical deposition of bismuth telluride thick layers onto nickel
title_fullStr Electrochemical deposition of bismuth telluride thick layers onto nickel
title_full_unstemmed Electrochemical deposition of bismuth telluride thick layers onto nickel
title_sort Electrochemical deposition of bismuth telluride thick layers onto nickel
author_id_str_mv 2deade2806e39b1f749e9cf67ac640b2
author_id_fullname_str_mv 2deade2806e39b1f749e9cf67ac640b2_***_Matthew Burton
author Matthew Burton
author2 C. Lei
K.S. Ryder
E. Koukharenko
M. Burton
Iris S. Nandhakumar
Matthew Burton
format Journal article
container_title Electrochemistry Communications
container_volume 66
container_start_page 1
publishDate 2016
institution Swansea University
issn 1388-2481
doi_str_mv 10.1016/j.elecom.2016.02.005
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Materials Science and Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Materials Science and Engineering
document_store_str 1
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description Bismuth telluride (Bi2Te3) is the currently best performing thermoelectric (TE) material in commercial TE devices for refrigeration and waste heat recovery up to 200 °C. Up to 800 μm thick, compact, uniform and stoichiometric Bi2Te3 films were synthesized by pulsed electrodeposition from 2 M nitric acid baths containing bismuth and tellurium dioxide on 1 cm2 nickel (Ni) substrates at average film growth rates of ~ 50 μm/h. Pre-treatment of the Ni substrate was found to significantly enhance the adhesion of Bi2Te3 material onto Ni while pulsed electrodeposition was used to increase the compactness of the material. To maintain a homogeneous composition across the thickness of the films, a sacrificial Bi2Te3 anode was employed. All deposits produced were n-type with a Seebeck coefficient of up to − 80 μV/K and an electrical conductivity of ~ 330 S/cm at room temperature.
published_date 2016-05-31T03:59:09Z
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