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Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe)
ACS Applied Materials & Interfaces, Volume: 12, Issue: 25, Pages: 28232 - 28238
Swansea University Authors: Matthew Burton , Connor Boyle, James McGettrick , Matt Carnie
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DOI (Published version): 10.1021/acsami.0c06026
Abstract
Tin selenide (SnSe) has attracted much attention in the thermoelectric community since the discovery of the record figure of merit (ZT) of 2.6 in single crystal tin selenide in 2014. There have been many reports since of the thermoelectric characterization of SnSe synthesized or manufactured by seve...
Published in: | ACS Applied Materials & Interfaces |
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ISSN: | 1944-8244 1944-8252 |
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American Chemical Society (ACS)
2020
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<?xml version="1.0"?><rfc1807><datestamp>2020-10-01T15:06:52.1874274</datestamp><bib-version>v2</bib-version><id>54520</id><entry>2020-06-12</entry><title>Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe)</title><swanseaauthors><author><sid>2deade2806e39b1f749e9cf67ac640b2</sid><ORCID>0000-0002-0376-6322</ORCID><firstname>Matthew</firstname><surname>Burton</surname><name>Matthew Burton</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>091575e810a0a086dba7f8fa89a49c81</sid><firstname>Connor</firstname><surname>Boyle</surname><name>Connor Boyle</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>bdbacc591e2de05180e0fd3cc13fa480</sid><ORCID>0000-0002-7719-2958</ORCID><firstname>James</firstname><surname>McGettrick</surname><name>James McGettrick</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>73b367694366a646b90bb15db32bb8c0</sid><ORCID>0000-0002-4232-1967</ORCID><firstname>Matt</firstname><surname>Carnie</surname><name>Matt Carnie</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2020-06-12</date><deptcode>MTLS</deptcode><abstract>Tin selenide (SnSe) has attracted much attention in the thermoelectric community since the discovery of the record figure of merit (ZT) of 2.6 in single crystal tin selenide in 2014. There have been many reports since of the thermoelectric characterization of SnSe synthesized or manufactured by several methods, but so far none of these have concerned the electrodeposition of SnSe. In this work, stoichiometric SnSe was successfully electrodeposited at −0.50 V vs SCE as shown by EDX, XPS, UPS, and XRD. The full ZT of the electrodeposits were then measured. This was done by both a delamination technique to measure the Seebeck coefficient and electrical conductivity which showed a peak power factor of 4.2 and 5.8 μW m–1 K–2 for the as deposited and heat-treated films, respectively. A novel modified transient 3ω method was used to measure the thermal conductivity of the deposited films on the deposition substrate. This revealed the thermal conductivity to be similar to the ultralow thermal conductivity of single crystal SnSe, with a value of 0.34 W m–1 K–1 being observed at 313 K.</abstract><type>Journal Article</type><journal>ACS Applied Materials & Interfaces</journal><volume>12</volume><journalNumber>25</journalNumber><paginationStart>28232</paginationStart><paginationEnd>28238</paginationEnd><publisher>American Chemical Society (ACS)</publisher><issnPrint>1944-8244</issnPrint><issnElectronic>1944-8252</issnElectronic><keywords>Thermal conductivity,Thin films,Crystal structure,Deposition,Electrical conductivity</keywords><publishedDay>24</publishedDay><publishedMonth>6</publishedMonth><publishedYear>2020</publishedYear><publishedDate>2020-06-24</publishedDate><doi>10.1021/acsami.0c06026</doi><url/><notes/><college>COLLEGE NANME</college><department>Materials Science and Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>MTLS</DepartmentCode><institution>Swansea University</institution><apcterm/><funders>UKRI, EP/N020863/1</funders><lastEdited>2020-10-01T15:06:52.1874274</lastEdited><Created>2020-06-12T00:00:00.0000000</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Engineering and Applied Sciences - Materials Science and Engineering</level></path><authors><author><firstname>Matthew</firstname><surname>Burton</surname><orcid>0000-0002-0376-6322</orcid><order>1</order></author><author><firstname>Connor</firstname><surname>Boyle</surname><order>2</order></author><author><firstname>Tianjun</firstname><surname>Liu</surname><order>3</order></author><author><firstname>James</firstname><surname>McGettrick</surname><orcid>0000-0002-7719-2958</orcid><order>4</order></author><author><firstname>Iris</firstname><surname>Nandhakumar</surname><order>5</order></author><author><firstname>Oliver</firstname><surname>Fenwick</surname><order>6</order></author><author><firstname>Matt</firstname><surname>Carnie</surname><orcid>0000-0002-4232-1967</orcid><order>7</order></author></authors><documents><document><filename>54520__17688__3dc95ab5f92d41e897c79fffdd731e02.pdf</filename><originalFilename>54520.pdf</originalFilename><uploaded>2020-07-10T11:24:00.1939739</uploaded><type>Output</type><contentLength>2524152</contentLength><contentType>application/pdf</contentType><version>Version of Record</version><cronfaStatus>true</cronfaStatus><documentNotes>This is an open access article published under a Creative Commons Attribution (CC-BY)
License, which permits unrestricted use, distribution and reproduction in any medium,
provided the author and source are cited.</documentNotes><copyrightCorrect>true</copyrightCorrect></document></documents><OutputDurs/></rfc1807> |
spelling |
2020-10-01T15:06:52.1874274 v2 54520 2020-06-12 Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe) 2deade2806e39b1f749e9cf67ac640b2 0000-0002-0376-6322 Matthew Burton Matthew Burton true false 091575e810a0a086dba7f8fa89a49c81 Connor Boyle Connor Boyle true false bdbacc591e2de05180e0fd3cc13fa480 0000-0002-7719-2958 James McGettrick James McGettrick true false 73b367694366a646b90bb15db32bb8c0 0000-0002-4232-1967 Matt Carnie Matt Carnie true false 2020-06-12 MTLS Tin selenide (SnSe) has attracted much attention in the thermoelectric community since the discovery of the record figure of merit (ZT) of 2.6 in single crystal tin selenide in 2014. There have been many reports since of the thermoelectric characterization of SnSe synthesized or manufactured by several methods, but so far none of these have concerned the electrodeposition of SnSe. In this work, stoichiometric SnSe was successfully electrodeposited at −0.50 V vs SCE as shown by EDX, XPS, UPS, and XRD. The full ZT of the electrodeposits were then measured. This was done by both a delamination technique to measure the Seebeck coefficient and electrical conductivity which showed a peak power factor of 4.2 and 5.8 μW m–1 K–2 for the as deposited and heat-treated films, respectively. A novel modified transient 3ω method was used to measure the thermal conductivity of the deposited films on the deposition substrate. This revealed the thermal conductivity to be similar to the ultralow thermal conductivity of single crystal SnSe, with a value of 0.34 W m–1 K–1 being observed at 313 K. Journal Article ACS Applied Materials & Interfaces 12 25 28232 28238 American Chemical Society (ACS) 1944-8244 1944-8252 Thermal conductivity,Thin films,Crystal structure,Deposition,Electrical conductivity 24 6 2020 2020-06-24 10.1021/acsami.0c06026 COLLEGE NANME Materials Science and Engineering COLLEGE CODE MTLS Swansea University UKRI, EP/N020863/1 2020-10-01T15:06:52.1874274 2020-06-12T00:00:00.0000000 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering Matthew Burton 0000-0002-0376-6322 1 Connor Boyle 2 Tianjun Liu 3 James McGettrick 0000-0002-7719-2958 4 Iris Nandhakumar 5 Oliver Fenwick 6 Matt Carnie 0000-0002-4232-1967 7 54520__17688__3dc95ab5f92d41e897c79fffdd731e02.pdf 54520.pdf 2020-07-10T11:24:00.1939739 Output 2524152 application/pdf Version of Record true This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited. true |
title |
Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe) |
spellingShingle |
Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe) Matthew Burton Connor Boyle James McGettrick Matt Carnie |
title_short |
Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe) |
title_full |
Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe) |
title_fullStr |
Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe) |
title_full_unstemmed |
Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe) |
title_sort |
Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe) |
author_id_str_mv |
2deade2806e39b1f749e9cf67ac640b2 091575e810a0a086dba7f8fa89a49c81 bdbacc591e2de05180e0fd3cc13fa480 73b367694366a646b90bb15db32bb8c0 |
author_id_fullname_str_mv |
2deade2806e39b1f749e9cf67ac640b2_***_Matthew Burton 091575e810a0a086dba7f8fa89a49c81_***_Connor Boyle bdbacc591e2de05180e0fd3cc13fa480_***_James McGettrick 73b367694366a646b90bb15db32bb8c0_***_Matt Carnie |
author |
Matthew Burton Connor Boyle James McGettrick Matt Carnie |
author2 |
Matthew Burton Connor Boyle Tianjun Liu James McGettrick Iris Nandhakumar Oliver Fenwick Matt Carnie |
format |
Journal article |
container_title |
ACS Applied Materials & Interfaces |
container_volume |
12 |
container_issue |
25 |
container_start_page |
28232 |
publishDate |
2020 |
institution |
Swansea University |
issn |
1944-8244 1944-8252 |
doi_str_mv |
10.1021/acsami.0c06026 |
publisher |
American Chemical Society (ACS) |
college_str |
Faculty of Science and Engineering |
hierarchytype |
|
hierarchy_top_id |
facultyofscienceandengineering |
hierarchy_top_title |
Faculty of Science and Engineering |
hierarchy_parent_id |
facultyofscienceandengineering |
hierarchy_parent_title |
Faculty of Science and Engineering |
department_str |
School of Engineering and Applied Sciences - Materials Science and Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Materials Science and Engineering |
document_store_str |
1 |
active_str |
0 |
description |
Tin selenide (SnSe) has attracted much attention in the thermoelectric community since the discovery of the record figure of merit (ZT) of 2.6 in single crystal tin selenide in 2014. There have been many reports since of the thermoelectric characterization of SnSe synthesized or manufactured by several methods, but so far none of these have concerned the electrodeposition of SnSe. In this work, stoichiometric SnSe was successfully electrodeposited at −0.50 V vs SCE as shown by EDX, XPS, UPS, and XRD. The full ZT of the electrodeposits were then measured. This was done by both a delamination technique to measure the Seebeck coefficient and electrical conductivity which showed a peak power factor of 4.2 and 5.8 μW m–1 K–2 for the as deposited and heat-treated films, respectively. A novel modified transient 3ω method was used to measure the thermal conductivity of the deposited films on the deposition substrate. This revealed the thermal conductivity to be similar to the ultralow thermal conductivity of single crystal SnSe, with a value of 0.34 W m–1 K–1 being observed at 313 K. |
published_date |
2020-06-24T04:08:07Z |
_version_ |
1763753577228009472 |
score |
11.035634 |