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Termination-dependence of Fermi level pinning at rare-earth arsenide/GaAs interfaces

Zhaofu Zhang, Yuzheng Guo Orcid Logo, John Robertson

Applied Physics Letters, Volume: 116, Issue: 25, Start page: 251602

Swansea University Author: Yuzheng Guo Orcid Logo

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DOI (Published version): 10.1063/5.0007479

Abstract

The properties of metal/semiconductor interfaces are generally described by the metal-induced gap states (MIGS) model. However, rare-earth (RE) arsenide interfaces are found not to follow the MIGS model in having very different Schottky barrier heights (SBHs) for the Ga- or As-terminations of polar...

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Published in: Applied Physics Letters
ISSN: 0003-6951 1077-3118
Published: AIP Publishing 2020
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URI: https://cronfa.swan.ac.uk/Record/cronfa54701
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spelling 2020-08-21T18:25:22.9947076 v2 54701 2020-07-14 Termination-dependence of Fermi level pinning at rare-earth arsenide/GaAs interfaces 2c285ab01f88f7ecb25a3aacabee52ea 0000-0003-2656-0340 Yuzheng Guo Yuzheng Guo true false 2020-07-14 GENG The properties of metal/semiconductor interfaces are generally described by the metal-induced gap states (MIGS) model. However, rare-earth (RE) arsenide interfaces are found not to follow the MIGS model in having very different Schottky barrier heights (SBHs) for the Ga- or As-terminations of polar (100) or (111) RE-As/GaAs interfaces. Density function supercell calculations find this effect is due to localized defect interface states located on the mis-coordinated atoms of these interfaces that pin their SBHs at very different energies for each termination as determined by the anion sublattice bonding. Band offsets of semiconducting ScN/GaN interfaces also depend on their termination as determined by the same defect interface states. This pinning mechanism dominates any MIGS mechanism when it arises. Nonpolar (110) interfaces have little change in bonding, so they have no defect interface states, and we find their SBH is pinned by MIGS at the charge neutrality level. Hence, traditional MIGS models should be extended to include such interface states in a more general description. Journal Article Applied Physics Letters 116 25 251602 AIP Publishing 0003-6951 1077-3118 22 6 2020 2020-06-22 10.1063/5.0007479 COLLEGE NANME General Engineering COLLEGE CODE GENG Swansea University 2020-08-21T18:25:22.9947076 2020-07-14T10:34:06.9757080 Zhaofu Zhang 1 Yuzheng Guo 0000-0003-2656-0340 2 John Robertson 3 54701__17704__1fbeee3eb2ae4130ad8c9db2075ce66f.pdf 54701.pdf 2020-07-14T10:35:27.9489132 Output 2090144 application/pdf Version of Record true 2021-06-22T00:00:00.0000000 true English
title Termination-dependence of Fermi level pinning at rare-earth arsenide/GaAs interfaces
spellingShingle Termination-dependence of Fermi level pinning at rare-earth arsenide/GaAs interfaces
Yuzheng Guo
title_short Termination-dependence of Fermi level pinning at rare-earth arsenide/GaAs interfaces
title_full Termination-dependence of Fermi level pinning at rare-earth arsenide/GaAs interfaces
title_fullStr Termination-dependence of Fermi level pinning at rare-earth arsenide/GaAs interfaces
title_full_unstemmed Termination-dependence of Fermi level pinning at rare-earth arsenide/GaAs interfaces
title_sort Termination-dependence of Fermi level pinning at rare-earth arsenide/GaAs interfaces
author_id_str_mv 2c285ab01f88f7ecb25a3aacabee52ea
author_id_fullname_str_mv 2c285ab01f88f7ecb25a3aacabee52ea_***_Yuzheng Guo
author Yuzheng Guo
author2 Zhaofu Zhang
Yuzheng Guo
John Robertson
format Journal article
container_title Applied Physics Letters
container_volume 116
container_issue 25
container_start_page 251602
publishDate 2020
institution Swansea University
issn 0003-6951
1077-3118
doi_str_mv 10.1063/5.0007479
publisher AIP Publishing
document_store_str 1
active_str 0
description The properties of metal/semiconductor interfaces are generally described by the metal-induced gap states (MIGS) model. However, rare-earth (RE) arsenide interfaces are found not to follow the MIGS model in having very different Schottky barrier heights (SBHs) for the Ga- or As-terminations of polar (100) or (111) RE-As/GaAs interfaces. Density function supercell calculations find this effect is due to localized defect interface states located on the mis-coordinated atoms of these interfaces that pin their SBHs at very different energies for each termination as determined by the anion sublattice bonding. Band offsets of semiconducting ScN/GaN interfaces also depend on their termination as determined by the same defect interface states. This pinning mechanism dominates any MIGS mechanism when it arises. Nonpolar (110) interfaces have little change in bonding, so they have no defect interface states, and we find their SBH is pinned by MIGS at the charge neutrality level. Hence, traditional MIGS models should be extended to include such interface states in a more general description.
published_date 2020-06-22T04:08:24Z
_version_ 1763753595278196736
score 11.012678

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