No Cover Image

Journal article 686 views

Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers

Steve Wilks, Vincent Teng Orcid Logo

Journal of Applied Physics, Volume: 103, Issue: 5, Pages: 053708 - 053711

Swansea University Authors: Steve Wilks, Vincent Teng Orcid Logo

Full text not available from this repository: check for access using links below.

Check full text

DOI (Published version): 10.1063/1.2888522

Published in: Journal of Applied Physics
ISSN: 0021-8979
Published: 2008
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa5570
Tags: Add Tag
No Tags, Be the first to tag this record!
first_indexed 2013-07-23T11:53:02Z
last_indexed 2018-02-09T04:32:00Z
id cronfa5570
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2013-11-07T09:43:24.0475190</datestamp><bib-version>v2</bib-version><id>5570</id><entry>2013-09-03</entry><title>Ni&#x2215;Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers</title><swanseaauthors><author><sid>948a547e27d969b7e192b4620688704d</sid><ORCID/><firstname>Steve</firstname><surname>Wilks</surname><name>Steve Wilks</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>98f529f56798da1ba3e6e93d2817c114</sid><ORCID>0000-0003-4325-8573</ORCID><firstname>Vincent</firstname><surname>Teng</surname><name>Vincent Teng</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>SMT</deptcode><abstract></abstract><type>Journal Article</type><journal>Journal of Applied Physics</journal><volume>103</volume><journalNumber>5</journalNumber><paginationStart>053708</paginationStart><paginationEnd>053711</paginationEnd><publisher/><issnPrint>0021-8979</issnPrint><issnElectronic/><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2008</publishedYear><publishedDate>2008-12-31</publishedDate><doi>10.1063/1.2888522</doi><url/><notes>From a project that grew out of collaboration with Materials and Engineering Research Institute (MERI) at Sheffield Hallam University to understand the factors that affect the electronic properties of metal contacts to large bandgap materials. This paper successfully demonstrated the crucial interplay between the nanoscale structure of the metal-semiconductor interface and the resulting electrical properties. The author made a substantial contribution to the conception and design of the study, the organisation of the study and to the development of the theoretical model.</notes><college>COLLEGE NANME</college><department>Senior Leadership Team</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>SMT</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2013-11-07T09:43:24.0475190</lastEdited><Created>2013-09-03T06:12:31.0000000</Created><path><level id="1">College of Science</level><level id="2">College of Science</level></path><authors><author><firstname>Steve</firstname><surname>Wilks</surname><orcid/><order>1</order></author><author><firstname>Vincent</firstname><surname>Teng</surname><orcid>0000-0003-4325-8573</orcid><order>2</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2013-11-07T09:43:24.0475190 v2 5570 2013-09-03 Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers 948a547e27d969b7e192b4620688704d Steve Wilks Steve Wilks true false 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2013-09-03 SMT Journal Article Journal of Applied Physics 103 5 053708 053711 0021-8979 31 12 2008 2008-12-31 10.1063/1.2888522 From a project that grew out of collaboration with Materials and Engineering Research Institute (MERI) at Sheffield Hallam University to understand the factors that affect the electronic properties of metal contacts to large bandgap materials. This paper successfully demonstrated the crucial interplay between the nanoscale structure of the metal-semiconductor interface and the resulting electrical properties. The author made a substantial contribution to the conception and design of the study, the organisation of the study and to the development of the theoretical model. COLLEGE NANME Senior Leadership Team COLLEGE CODE SMT Swansea University 2013-11-07T09:43:24.0475190 2013-09-03T06:12:31.0000000 College of Science College of Science Steve Wilks 1 Vincent Teng 0000-0003-4325-8573 2
title Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
spellingShingle Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
Steve Wilks
Vincent Teng
title_short Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
title_full Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
title_fullStr Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
title_full_unstemmed Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
title_sort Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
author_id_str_mv 948a547e27d969b7e192b4620688704d
98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 948a547e27d969b7e192b4620688704d_***_Steve Wilks
98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author Steve Wilks
Vincent Teng
author2 Steve Wilks
Vincent Teng
format Journal article
container_title Journal of Applied Physics
container_volume 103
container_issue 5
container_start_page 053708
publishDate 2008
institution Swansea University
issn 0021-8979
doi_str_mv 10.1063/1.2888522
college_str College of Science
hierarchytype
hierarchy_top_id collegeofscience
hierarchy_top_title College of Science
hierarchy_parent_id collegeofscience
hierarchy_parent_title College of Science
department_str College of Science{{{_:::_}}}College of Science{{{_:::_}}}College of Science
document_store_str 0
active_str 0
published_date 2008-12-31T03:19:40Z
_version_ 1733672336876371968
score 10.872023